Pressure- and orientation-dependent elastic and ultrasonic characterisation of wurtzite boron nitride

Some physical properties of K2TlAsX6 (X = Cl, Br) and CsPbBr3 semiconducting compounds

“…[29] for new iridium phosphide (Ir2P) in cubic antifluorite structure from 0 up to 100 GPa. The same behaviors were also observed for both CuCl and CuBr semiconductors [30], for BeSe compound up to 50 GPa [31], for BSb material [32], for cubic Na2He compound [25,33], for Gabbro (igneous rock) material [34], for boron-bismuth (BBi) compound up to 30 GPa [35], for PdGa intermetallic compound up to 25 GPa [36], for hexagonal intermetallic compound Ti3Al from 0 up to 80 GPa [37], and for wurtzite boron nitride [38]. Through the work of Wang et al [39], we note also that the high pressures has little influence on θD values for M2AlC (M = V, Nb and Ta) materials, while Gao et al [40] found that the Debye temperature θD of Cu2ZnSiSe4 decrease slowly with increasing temperature from 0 to 500 K. Our obtained values of the acoustic impedance Z and the Cauchy pressure CP up to 15 GPa for CsPbBr3 material are also traced in figure 4.…”