Presence and distribution of impurity defects in crystalline cubic boron nitride. A spectroscopic study

Nistor, S. V.; Nistor, L. C.; Joita, Alexandra C.; Vlaicu, A. M.

doi:10.1016/j.radmeas.2019.02.003

Cited by 6 publications

(3 citation statements)

References 22 publications

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“…Thus, recent studies by analytical high-resolution scanning transmission electron microscopy/transmission electron microscopy [a-(HR)STEM/TEM], cathodoluminescence, ionoluminescence, and electron spin resonance (ESR) evidenced the presence and non-uniform distribution of certain impurities incorporated in the cBN crystallites. 14 − 17 As reported here, tin (Sn) is such an impurity, which we found in dark BORAZON CBN Type 1 crystallites.…”

Section: Introductionsupporting

confidence: 77%

“…The main reason is the extreme difficulty of preparing enough large (mm-sized), good quality single crystals with controlled impurity content, as required for physical investigations. − With recent advances in microanalysis and microstructural techniques using electron beams, , it is now possible to investigate the presence, nature, and aggregation state of the impurities incorporated in the submillimeter-sized cBN crystallites found in large-sized commercial superabrasive powders. Thus, recent studies by analytical high-resolution scanning transmission electron microscopy/transmission electron microscopy [a-(HR)STEM/TEM], cathodoluminescence, ionoluminescence, and electron spin resonance (ESR) evidenced the presence and non-uniform distribution of certain impurities incorporated in the cBN crystallites. − As reported here, tin (Sn) is such an impurity, which we found in dark BORAZON CBN Type 1 crystallites.…”

Section: Introductionsupporting

confidence: 55%

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Microstructure and Conduction Electron Quantum Properties of Small Diamond Cubic α-Sn Nanocrystals Embedded in Cubic Boron Nitride Crystals

Nistor

Stefan

et al. 2022

ACS Omega

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The morphology, structure, composition, and conduction electron properties of quasi-spherical tin nanocrystals (NCs) of 2.5 nm average diameter, with unstrained, bulk-like α-Sn diamond cubic structure, observed in dark cubic boron nitride (cBN) crystallites, were determined by correlated analytical high-resolution scanning transmission electron microscopy and multifrequency electron spin resonance (ESR) investigations. The narrow Lorentzian ESR line with g = 2.0028 is attributed to the conduction ESR of the α-Sn NCs, consistent with the temperature-and frequency-independent small g-shift and intensity reduction under high temperature (950 °C) vacuum annealing when the α-Sn NCs are thermally dissolved in the host cBN crystallites. The ESR linewidth and line intensity vs temperature dependences recorded in the 20 to 295 K range are quantitatively described considering the presence of discrete, quantum confinement-induced conduction electron energy levels with Δ QC /k B = 125 K separation, close to the theoretical value for conductive α-Sn NCs of 2.5 nm in diameter. The observed properties are tentatively explained with the predicted nanosize induced band-gap opening and change of band ordering from bulk α-Sn to small unstrained α-Sn NCs, resulting in a topological phase transition that also explains the predominantly s-like character of the conduction band electron orbitals.

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Section: Introductionsupporting

confidence: 77%

Section: Introductionsupporting

confidence: 55%

Microstructure and Conduction Electron Quantum Properties of Small Diamond Cubic α-Sn Nanocrystals Embedded in Cubic Boron Nitride Crystals

Nistor

Stefan

et al. 2022

ACS Omega

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“…The peak intensity increased as K-cell temperature increased to 1300 °C, which means the luminescence of h-BN QDs increased. The CL spectrum with peaks at 436 and 485 nm is attributed to the trapping centers in h-BN, as mentioned by Nistor et al [31]. Furthermore, CL spectra for samples T2 and T4 in Figure 6 revealed a significant increase in the peak intensity when growth temperature increased to 800 °C, indicating the better formation of h-BN QDs.…”

Section: Cathodoluminescence Analysissupporting

confidence: 66%

The Growth of Hexagonal Boron Nitride Quantum Dots on Polycrystalline Nickel Films by Plasma-Assisted Molecular Beam Epitaxy

et al. 2022

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In this report, quantum dots of hexagonal boron nitride (h-BN) were fabricated on the surface of polycrystalline Ni film at low growth temperatures (700, 750, and 800 °C) by plasma-assisted molecular beam epitaxy. Reflection high-energy electron diffraction could trace the surface condition during the growth and perform the formation of BN. The observation of surface morphology by scanning electron microscopy and atomic force microscopy showed the nanodots of BN on Ni films. The existence of crystal h-BN quantum dots was determined by the analysis of Raman spectra and Kevin probe force microscopy. The cathodoluminescence of h-BN quantum dots performed at the wavelength of 546 and 610 nm, attributed to the trapping centers involving impurities and vacancies. Moreover, the influence of temperatures for the substrate and boron source cell was also investigated in the report. When the k-cell temperature of boron and growth temperature of substrate increased, the emission intensity of cathodoluminescence spectra increased, indicating the better growth parameters for h-BN quantum dots.

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First-principles studying for quantum defects in cubic boron nitride

Nguyen

2025

Computational Materials Science

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Presence and distribution of impurity defects in crystalline cubic boron nitride. A spectroscopic study

Cited by 6 publications

References 22 publications

Microstructure and Conduction Electron Quantum Properties of Small Diamond Cubic α-Sn Nanocrystals Embedded in Cubic Boron Nitride Crystals

Microstructure and Conduction Electron Quantum Properties of Small Diamond Cubic α-Sn Nanocrystals Embedded in Cubic Boron Nitride Crystals

The Growth of Hexagonal Boron Nitride Quantum Dots on Polycrystalline Nickel Films by Plasma-Assisted Molecular Beam Epitaxy

First-principles studying for quantum defects in cubic boron nitride

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