2004
DOI: 10.1016/j.jssc.2004.07.030
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Preparation, structure and ultraviolet photoluminescence of ZnO films by a novel chemical method

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Cited by 44 publications
(23 citation statements)
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“…5c) when the film was annealed at 600°C in Ar + H 2 . The film annealed in Ar + H 2 had a smoother surface than that of the as-deposited film, and, moreover, the surface roughness of the film studied was less than that in the previous survey, 11 which notes the deterioration of electrical and optical properties with the increase in surface roughness. 17 The reduction in effective surface area, affected mostly by the decreasing surface roughness of the film, results in the decrease of absorption sites for oxygen, so the film has a low resistivity.…”
Section: Electrical Propertiesmentioning
confidence: 58%
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“…5c) when the film was annealed at 600°C in Ar + H 2 . The film annealed in Ar + H 2 had a smoother surface than that of the as-deposited film, and, moreover, the surface roughness of the film studied was less than that in the previous survey, 11 which notes the deterioration of electrical and optical properties with the increase in surface roughness. 17 The reduction in effective surface area, affected mostly by the decreasing surface roughness of the film, results in the decrease of absorption sites for oxygen, so the film has a low resistivity.…”
Section: Electrical Propertiesmentioning
confidence: 58%
“…The film had a wurtzite structure [Joint Committee on Powder Diffraction Standards (JCPDS) 75-0576]; in addition, the wurtzite ZnO had (002) and (101) preferential orientations. The as-deposited ZnO film from CBD was observed in a recent survey 11 to have a hexagonal wurtzite structure with an (002) preferential orientation. Also, the intensity ratio of diffraction peaks between (002) and (101) was remarkably different when the film was deposited on a glass substrate rather than an Si substrate.…”
Section: Structural Characterizationmentioning
confidence: 99%
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“…A violet emission band centered at about 395 nm, which can be assigned to the electron transition from the localized levels below the conduction band to the valance band of ZnO [18], can be observed in PL spectra. The localized levels may be originated from the free impurity atoms and various defects [19]. A blue emission band in the range of 445-480 nm can be attributed to the electron transition from extended Zn i levels, which are slightly below the Zn i level, to the valance band [20].…”
Section: Resultsmentioning
confidence: 98%