Multi-walled carbon nanotubes (CNTs) were grown on silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition method, and the structural and capacitive humidity sensing properties of CNT/Si-NPA were studied. It was found that with the relative humidity (RH) changing from 11% to 95%, a device response of ~480% was achieved at the frequency of 50000 Hz, and a linear device response curve could be obtained by adopting longitudinal logarithmic coordinate. The response/recovery times were measured to be ~20 s and ~10 s, respectively, which indicated a rather fast response/recovery rate. The adsorption-desorption dynamic cycle experiments demonstrated the high measurement reproducibility of CNT/Si-NPA sensors. These excellent performances were attributed to the unique surface structure, morphology and chemical inertness of CNT/Si-NPA.capacitive humidity sensor, carbon nanotubes (CNTs), silicon nanoporous pillar array (Si-NPA), CNT/Si-NPA Because the electric properties of carbon nanotubes (CNTs) are very sensitive to environments, CNT-based gas sensors, with both high sensitivity and high response speed, have been developed in detecting various toxic gases such as NO 2 , H 2 S and NH 3 [1][2][3][4] . Encouraged by the progress achieved in fabricating gas sensors, CNT-based humidity sensors, both resistive and capacitive types, have been probed by several groups in the past several years [5,6] . Nevertheless, the sensing properties of CNT humidity sensors are presently far from device requirement. For example, the resistive sensors exhibited a rather low sensitivity and a very slow response/recovery speed [5,6] . Although the sensitivity was greatly improved for capacitive sensors, the problem of slow response/recovery speed remains unsolved [6] . In the papers published previously [7][8][9] , we reported the study on the capacitive humidity sensing properties of a silicon hierarchical structure, silicon nanoporous pillar array (Si-NPA), through which a very fast response/recovery speed was achieved. The excellent response/recovery behavior of Si-NPA-based sensors was attributed to the formation