Preparation, properties, and photocatalytic mechanism of In2.77S4/BiVO4 heterostructure for tetracycline degradation

Wu, Xiang-Feng; Chang, Tian-Long; Fu, Yun-Xuan; Shi, Yi-Mai; Su, Jun-Zhang; Wang, Zehong; Ma, Xiao-Ye; Wang, Hui

doi:10.1007/s10854-022-08387-3

Cited by 6 publications

(2 citation statements)

References 49 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Besides, the local enlarged high-resolution TEM detected the lattice fringes of In 2.77 S 4 and In(OH) 3 , confirming the formation of a In 2.77 S 4 /In(OH) 3 heterojunction (Figure e). The d -spacing of In 2.77 S 4 /In(OH) 3 is analyzed by the fast Fourier transform, and a lattice spacing of 0.280 nm is related to the (220) crystal plane of cubic In(OH) 3 , and a d -spacing of 0.619 nm is a response to the (111) plane of In 2.77 S 4 . , The TEM images of In 2.77 S 4 /In(OH) 3 /P indicate small nanosheets are wrapped around a larger size nanosheet with a similarly morphology (Figure f). Interestingly, we found the lattice spacing corresponding to the (111) plane of In 2.77 S 4 increases after P doping (0.702 nm), and the lattice spacing of the (220) plane of In(OH) 3 is 0.280 nm (Figure g).…”

Section: Resultsmentioning

confidence: 99%

Tuning Surface Electronics State of P-Doped In_2.77S₄/In(OH)₃ toward Efficient Photoelectrochemical Water Oxidation

Xiong,

He,

Cui

et al. 2024

Langmuir

View full text Add to dashboard Cite

Indium sulfide with a two-dimensional layered structure offers a platform for catalyzing water oxidation by a photoelectrochemical process. However, the limited hole holders hinder the weak intrinsic catalytic activity. Here, the nonmetallic phosphorus atom is coordinated to In 2.77 S 4 /In(OH) 3 through a bridge-bonded sulfur atom. By substituting the S position by the P dopant, the work function (surface potential) is regulated from 445 to 210 mV, and the lower surface potential is shown to be beneficial for holding the photogenerated holes. In 2.77 S 4 /In(OH) 3 /P introduces a built-in electric field under the difference of Fermi energy, and the direction is from the bulk to the surface. This band structure results in upward band bending at the interface of In 2.77 S 4 /In(OH) 3 and P-doped sites, which is identified by density functional theory calculations (∼0.8 eV work function difference). In 2.77 S 4 /In(OH) 3 /P stands out with the highest oxidation efficiency (η oxi = 70%) and charge separation efficiency (η sep = 69%). Importantly, it delivers a remarkable water oxidation photocurrent density of 2.51 mA cm −2 under one sun of illumination.

show abstract

Section: Resultsmentioning

confidence: 99%

Tuning Surface Electronics State of P-Doped In_2.77S₄/In(OH)₃ toward Efficient Photoelectrochemical Water Oxidation

Xiong,

He,

Cui

et al. 2024

Langmuir

View full text Add to dashboard Cite

show abstract

“…In general, the size of the arc diameter indicates the efficiency of the charge-transfer process at the electrode interface. The larger the arc diameter, the higher the charge-transfer resistance, which is not favorable for charge transfer. − Apparently, the smaller arc diameter of the SO-IS-2 composite relative to the pure SnO 2 and In 3– x S 4 samples proves that the charge-transfer resistance is reduced after compositing. The photoelectric and photoelectrochemical results corroborate that the charge separation and transfer in the SnO 2 /In 3– x S 4 composite photocatalysts are greatly improved, thus exhibiting more excellent photocatalytic performance.…”

Section: Results and Discussionmentioning

confidence: 99%

Vacancy-Mediated Z-Scheme Heterostructure in SnO₂-Decorated Spinel In_3–xS₄ with Boosted Photocatalytic Activity

Tang

Xiong

et al. 2022

Inorg. Chem.

View full text Add to dashboard Cite

The widespread application of dyes and heavy metals causes increasing environmental pollution. One effective way to mitigate environmental pollution is to use semiconductor photocatalysts for redox purification of pollutants. Heterostructured photocatalysts can reduce the electron−hole recombination rate and improve light utilization. In this work, a novel SnO 2 / In 3−x S 4 composite with oxygen vacancy defect-mediated Z-scheme heterostructure is constructed for the first time by a one-pot method, in which SnO 2 ultrasmall nanocrystals are decorated on nanopetals of flower-like In 3−x S 4 . Material analyses show that the as-built three-dimensional hierarchical architecture is able to essentially increase the specific surface area and thus the active sites of the products. More importantly, the formation of Z-scheme heterojunction between the oxygen vacancy-induced SnO 2 defect level and the In 3−x S 4 band structure not only promotes the separation of photogenerated charges but also makes them more reactive. Through the optimization of the composition ratio between the two phases, the visible-light-driven photocatalytic reaction rates of rhodamine B degradation and Cr(VI) reduction for the developed SnO 2 /In 3−x S 4 composite photocatalyst are 12.8 and 6.3 times of bare In 3−x S 4 and 32.0 and 76.0 times of bare SnO 2 , respectively. This work should provide a promising implication for designing new high-performance composite photocatalysts.

show abstract

Fabrication and characterization of In2.77S4/COFs composite photocatalyst for efficient degradation of tetracycline

Kang

Liu

et al. 2023

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Preparation, properties, and photocatalytic mechanism of In2.77S4/BiVO4 heterostructure for tetracycline degradation

Cited by 6 publications

References 49 publications

Tuning Surface Electronics State of P-Doped In_2.77S₄/In(OH)₃ toward Efficient Photoelectrochemical Water Oxidation

Tuning Surface Electronics State of P-Doped In_2.77S₄/In(OH)₃ toward Efficient Photoelectrochemical Water Oxidation

Vacancy-Mediated Z-Scheme Heterostructure in SnO₂-Decorated Spinel In_3–xS₄ with Boosted Photocatalytic Activity

Fabrication and characterization of In2.77S4/COFs composite photocatalyst for efficient degradation of tetracycline

Contact Info

Product

Resources

About

Preparation, properties, and photocatalytic mechanism of In2.77S4/BiVO4 heterostructure for tetracycline degradation

Cited by 6 publications

References 49 publications

Tuning Surface Electronics State of P-Doped In2.77S4/In(OH)3 toward Efficient Photoelectrochemical Water Oxidation

Tuning Surface Electronics State of P-Doped In2.77S4/In(OH)3 toward Efficient Photoelectrochemical Water Oxidation

Vacancy-Mediated Z-Scheme Heterostructure in SnO2-Decorated Spinel In3–xS4 with Boosted Photocatalytic Activity

Fabrication and characterization of In2.77S4/COFs composite photocatalyst for efficient degradation of tetracycline

Contact Info

Product

Resources

About

Tuning Surface Electronics State of P-Doped In_2.77S₄/In(OH)₃ toward Efficient Photoelectrochemical Water Oxidation

Tuning Surface Electronics State of P-Doped In_2.77S₄/In(OH)₃ toward Efficient Photoelectrochemical Water Oxidation

Vacancy-Mediated Z-Scheme Heterostructure in SnO₂-Decorated Spinel In_3–xS₄ with Boosted Photocatalytic Activity