Preparation of β-FeSi2 substrates by molten salt method

Syntheses and Electrical Properties of Hexagonal Phase Group VI Metal Silicide Powders, Sintered Compacts and Bulk Crystals

“…The h-MoSi 2 and h-WSi 2 semiconducting phases cannot be grown from a melt, but the molten salt method is one of Published under licence by IOP Publishing Ltd the bulk growth techniques. The successful growth of the low temperature phase β-FeSi 2 bulk crystal was previously reported, then the structural and electrical properties were investigated [4]. In this study, the Mo-and W-silicides were synthesized by the molten salt method, and the structural and electrical properties of the silicides were examined.…”

Effect of Cu or Co addition on β-FeSi2 growth by molten salt method

“…Though it is difficult to grow b-FeSi 2 bulk crystals from the liquid phase due to the existence of the high temperature aFeSi 2 phase [1], a vacuum free, molten salt method to grow large sized b-FeSi 2 layers has been established [2]. Since then, the silicide growth technique using the molten salt method has been improved in order to fabricate mm-sized b-FeSi 2 substrates [3]. In addition, its structural property of the molten salt grown b-FeSi 2 was investigated in detail, and the electrical property was characterized [3,4].…”

“…Since then, the silicide growth technique using the molten salt method has been improved in order to fabricate mm-sized b-FeSi 2 substrates [3]. In addition, its structural property of the molten salt grown b-FeSi 2 was investigated in detail, and the electrical property was characterized [3,4]. However, the b-FeSi 2 has a high resistivity and only the p-type conduction is realized at this moment.…”

“…crystals without any impurity addition in Ref. [3]. The domain boundary at the center is the interface where the b-FeSi 2 domains are grown from both sides of the FeSi and meet at the center of the crystal.…”

Control of the Crystal Phase in Fe/Si Films by Using Thin Film Zone Melting Crystallization

“…-FeSi 2 has numerous other advantages including (a) direct band gap of 0.83 to 0.87 eV [1][2][3], suggesting that photoelectrons can be generated in the near-infrared region unused in Si, (b) high absorption coefficient of 10 5 cm -1 [4] at 1.0 eV, which is about 100 times higher than that of Si, (c) theoretical solar energy conversion efficiency as high as 23% [5], and (d) extensive research into its use in thermoelectrical devices [6][7] as well as optoelectrical devices. On the other hand, -FeSi 2 has a disadvantage feature as the low carrier mobility [8][9][10][11] caused by its large electron-lattice interaction. The crystal system of -FeSi 2 films is orthorhombic with a lattice parameter of a=0.98636, b=0.7791 and c=0.7833 nm, and can be designated as a 'distorted CaF2' structure.…”