Preparation of zinc sulfide thin films by ultrasonic spray pyrolsis from bis(diethyldithiocarbamato) zinc(II)

Pike, Robert D.; Cui, Hui-Ling; Kershaw, R.; Dwight, K.; Wold, A.; Blanton, Tom; Wernberg, Alex A.; Gysling, Henry J.

doi:10.1016/0040-6090(93)90436-s

Cited by 100 publications

(59 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[45] The characteristic absorptions of the xanthate ligands were not detected, suggesting an essentially complete precursor decomposition at the temperatures used. [38] AFM analyses revealed that the surface morphology was influenced more by the substrate than by the growth temperature.…”

Section: Resultsmentioning

confidence: 95%

Single‐Source Chemical Vapor Deposition of Zinc Sulfide‐Based Thin Films from Zinc bis(O‐ethylxanthate)

Barreca¹,

Tondello

Lydon

et al. 2003

Chemical Vapor Deposition

View full text Add to dashboard Cite

A novel single-source precursor, zinc bis(O-ethylxanthate), was employed for the CVD of ZnS-based thin films. The coatings were deposited on SiO 2 and SiO 2 /Si(100) substrates in a N 2 atmosphere in a cold-wall reactor in the temperature range 250± 400 C. The optical properties of the films were investigated by ultra violet-visible (UV-vis) absorption and Fourier transform infrared (FTIR) spectroscopies. The surface and in-depth chemical composition were studied by X-ray photoelectron spectroscopy (XPS), X-ray excited Auger electron spectroscopy (XE-AES), and secondary ion mass spectrometry (SIMS). Finally, atomic force microscopy (AFM) was employed to analyze the surface morphology of the coatings. Very thin films, with thickness less than 30 nm and no evidence of crystalline phases, were grown at temperatures of at least 300 C. Optical measurement showed that the coatings were highly transparent ( > 80 %) throughout the visible and IR spectral ranges.

show abstract

Section: Resultsmentioning

confidence: 95%

Single‐Source Chemical Vapor Deposition of Zinc Sulfide‐Based Thin Films from Zinc bis(O‐ethylxanthate)

Barreca¹,

Tondello

Lydon

et al. 2003

Chemical Vapor Deposition

View full text Add to dashboard Cite

show abstract

“…500°C, while for a higher fugacity of sulfur the transition temperature moves to above 1000°C. Wold et al [49] determined that the growth of hexagonal ZnS thin films generally occurs at higher temperatures. The cubic ZnS film can form at high temperatures on closely lattice-matched substrates.…”

Section: Resultsmentioning

confidence: 99%

The deposition of thin films of cadmium zinc sulfide Cd1−x Zn x S at 250 °C from spin-coated xanthato complexes: a potential route to window layers for photovoltaic cells

2017

View full text Add to dashboard Cite

Thin films of Cd 1-x Zn x S (CZS) were prepared by a novel spin coating/melt method from cadmium ethylxanthato [Cd(C 2 H 5 OCS 2 ) 2 ] and zinc ethylxanthato [Zn(C 2 H 5 OCS 2 ) 2 ] in x ratios of 0-0.15 and of 1. A solution of the precursor(s) in THF was spin coated onto a glass substrate and then heated at 250°C for 1 h under N 2 . The thickness of the film formed can be controlled by varying the solution composition and/or the spin rate of the coating. A total metal precursor solution concentration of 50 mM was used in all cases. The films were characterized by p-XRD, SEM, EDX, ICP-AES, XPS, UV-Vis absorption spectroscopy, Raman spectroscopy and resistivity measurements. The band gaps of the films were between 2.35-2.58 and 3.75 eV (0 B x B 0.15 and at x = 1). The resistivity of Cd 1-x Zn x S films was found to vary linearly with zinc contents, and the properties of the films suggest potential application to photovoltaics as window layers. This work is the first study to demonstrate Cd 1-x Zn x S thin films by a spin coating/melt method from xanthato precursors.

show abstract

“…Below 250 C, the films contained organic fragments. [73] The authors mention a kinetic study, by Gaprindashvili and Tckalobadze, of the growth process of CdS by spray pyrolysis, [74] and measurements of the activation energy for the growth of CdS films from Cd[S 2 CN(Et) 2 ] 2 vapor in the range 200±350 C, by Svechnikov et al [75] Pike et al [76] prepared ZnS thin films by ultrasonic spray pyrolysis of a toluene solution of Cd[S 2 CN(Et) 2 ] 2 , in the temperature range 460±520 C. (111)-Si, (200)-Si, (011 Å 2)-Al 2 O 3 , (0001)-Al 2 O 3 , or (100)-GaAs were used as substrates. A gas chromatography±mass spectrometry (GC-MS) analysis of the gas resulting from the decomposition of the precursor led the authors to propose the mechanism below, even though the presence of ethylene was not detected.…”

Section: From Dialkyldichalcogenocarbamatomentioning

confidence: 99%

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

Gleizes

2000

Chem. Vap. Deposition

129

View full text Add to dashboard Cite

The single-source approach to processing materials as thin films by metal±organic chemical vapor deposition (MOCVD) started with pioneering works in the late 1970s and early 1980s, and has developed considerably during the late 1980s and the 1990s. The literature contains some review and feature articles dedicated to its application to various types of materials, the most recent ones appearing in the mid 1990s. The present review aims at putting together results obtained for very different materials so as to obtain a comparative view of the different approaches. Faced with the considerable amount of data accumulated over more than twenty years, the scope of this article will be deliberately and arbitrarily limited to those compounds mentioned in the title. Materials consisting of elements from the second row of the periodic table, or binary combinations including one element from the second row, will not be considered here. This article will refer to precursors that have actually been used in MOCVD processes, rather than potential MOCVD sources.

show abstract

Preparation of zinc sulfide thin films by ultrasonic spray pyrolsis from bis(diethyldithiocarbamato) zinc(II)

Cited by 100 publications

References 34 publications

Single‐Source Chemical Vapor Deposition of Zinc Sulfide‐Based Thin Films from Zinc bis(O‐ethylxanthate)

Single‐Source Chemical Vapor Deposition of Zinc Sulfide‐Based Thin Films from Zinc bis(O‐ethylxanthate)

The deposition of thin films of cadmium zinc sulfide Cd1−x Zn x S at 250 °C from spin-coated xanthato complexes: a potential route to window layers for photovoltaic cells

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

Contact Info

Product

Resources

About