“…Various bonding methods for Cu and ceramic, such as direct bonding copper, 1,7,14,15 direct plating copper, 8,16 active metal bonding, 10,12 and laser activation metallization 9,17 which limits the current carrying capacity. In direct plating copper technology, the ceramic is first surface modified by vacuum sputtering, and then electro-plated Cu is made on the ceramic via chemical bonding at a low temperature of ∼300 • C. 8 The thickness of Cu is limited to below 1 mm for a low plating rate of several µm/h.…”