Preparation of single-crystal diamond for Small Angle X-ray Scattering in situ loading test

Liu, X.C.; Ge, Xinyu; Li, Y.F.; An, X.M.; Jiang, Lei; Guo, Hailin; Sun, Z.L.; Miao, Xiao; Lu, Fan Xiu

doi:10.1016/j.diamond.2021.108719

Cited by 5 publications

(1 citation statement)

References 25 publications

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“…Additionally, simulations at a temperature of 1273 K were conducted, which was commonly used in experimental diamond growth process. [34][35][36][37][38] Before the irradiation process, it was necessary to apply the relaxation process, which consisted of two steps: minimization and equilibration. In the minimization step, what was needed to do was minimized the energy of the surface system using the Polak-Ribiere version of the conjugate gradient (CG) algorithm.…”

Section: Methodsmentioning

confidence: 99%

The Etching Mechanisms of Diamond, Graphite, and Amorphous Carbon by Hydrogen Plasma: A Reactive Molecular Dynamics Study

Zhang

et al. 2023

Advcd Theory and Sims

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Understanding how hydrogen plasma etches various potential products during the diamond growth process can contribute to improving the knowledge of diamond growth. However, due to the absence of an in situ characterization technique during the etching process, the complex chemical reactions involved in the process obscure the atomic‐scale etching mechanisms. In this paper, the etching mechanisms of diamond (001), graphite (0001), and amorphous carbon substrates irradiated by hydrogen plasmas are investigated and compared using molecular dynamics simulations based on ReaxFF. When the incident energy of H atoms is 1 eV, the rate of carbon loss from graphite and amorphous carbon are far higher than that from diamond. As the incident energy of H atoms increases, the etching rate of diamond shows a slow increase, while the etching rates of amorphous carbon and graphite exhibit more significant increases. It can be concluded that the etching rate of diamond is significantly lower than that of graphite and amorphous carbon under H plasma. In the Chemical Vapor Deposition (CVD) process of diamond growth, the generated graphite and amorphous carbon are rapidly etched, leaving only diamond. This offers a plausible explanation for the growth mechanism of diamond through CVD.

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Section: Methodsmentioning

confidence: 99%

The Etching Mechanisms of Diamond, Graphite, and Amorphous Carbon by Hydrogen Plasma: A Reactive Molecular Dynamics Study

Zhang

et al. 2023

Advcd Theory and Sims

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Quasi‐2D Phonon Transport in Diamond Nanosheet

Zhu,

Ye,

Wen

et al. 2024

Adv Funct Materials

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Nanomaterial phonon transport is crucial for miniaturized devices and superior thermophysical properties in condensed matter physics. Diamond nanosheets, applicable in nanoelectronics/optoelectronics, offer availability to explore dimensionality's impact on phonon transport. Raman spectroscopy is used to study the thermal conductivity (κ) of diamond nanosheets with a thickness below 100 nm. Results show a law above 140 K, highlighting Umklapp phonon scattering. Despite the reduced thickness, κ (1100‐2000 W/mK) remains higher than metals and most semiconductors, showcasing diamonds' remarkable in‐plane heat transfer. Intriguingly, the research uncovers unique length‐dependent behavior , consistent with graphene, the two‐dimensional (2D) allotrope. This research offers insights into thermal transport in quasi‐2D nanosheets, with significant implications for nanoscale heat management and highly efficient thermal devices.

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Recent progress in homoepitaxial single-crystal diamond growth via MPCVD

Ren,

Li,

et al. 2024

J Mater Sci: Mater Electron

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Preparation of single-crystal diamond for Small Angle X-ray Scattering in situ loading test

Cited by 5 publications

References 25 publications

The Etching Mechanisms of Diamond, Graphite, and Amorphous Carbon by Hydrogen Plasma: A Reactive Molecular Dynamics Study

The Etching Mechanisms of Diamond, Graphite, and Amorphous Carbon by Hydrogen Plasma: A Reactive Molecular Dynamics Study

Quasi‐2D Phonon Transport in Diamond Nanosheet

Recent progress in homoepitaxial single-crystal diamond growth via MPCVD

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