Preparation of self-aligned in-line tunnel junctions for applications in single-charge electronics

Götz, Martín; Blüthner, K.; Krech, W.; Nowack, A.; Fuchs, H.‐J.; Kley, E.‐B.; Thieme, Philipp; Wagner, Th.; Eska, G.; Hecker, K.; Hegger, H.

doi:10.1063/1.359666

Cited by 13 publications

(2 citation statements)

References 4 publications

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“…With values from Fig. 4 [24][25][26][27] Our value for specific capacitance is therefore in line with previously measured values for standard Al-AlO x -Al junctions.…”

Section: Low Temperature Propertiessupporting

confidence: 74%

Double oxidation scheme for tunnel junction fabrication

Holmqvist¹,

Meschke²,

Pekola³

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The authors report a method to achieve Al–AlOx–Al tunnel junctions with high specific resistance in a controlled manner using a double oxidation technique. The technique is based on the standard method for oxidation repeated on an additional Al layer. The tunnel junctions were characterized with standard methods, such as comparison of room temperature resistance with liquid helium resistance and the authors found them to be of comparable quality to junctions fabricated with standard single oxidation. Fitting with the Simmons model suggests that both the barrier width and barrier height are consistent with those obtained in a single oxidation step. The junction specific capacitance was determined at low temperature to be 68fF∕μm2. These junctions, employed in low temperature measurements and applications, demonstrate expected and stable conductance characteristics. The double oxidation method is straightforward to implement in a basic setup for tunnel junction fabrication.

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“…With values from Fig. 4 [24][25][26][27] Our value for specific capacitance is therefore in line with previously measured values for standard Al-AlO x -Al junctions.…”

Section: Low Temperature Propertiessupporting

confidence: 74%

Double oxidation scheme for tunnel junction fabrication

Holmqvist¹,

Meschke²,

Pekola³

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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show abstract

“…Typical capacitances achieved with this method are in the range of 50 aF. The self-aligned in-line (SAIL) [3] process is capable of capacitances that are at least half as small. The idea of utilizing thin granular metal films is old, but still a point of intensive research [4][5][6].…”

Section: Fabrication: Technologymentioning

confidence: 99%

A possible road to 77 K single-electron devices

Altmeyer¹,

Kühnel²,

Spangenberg³

et al. 1996

Semicond. Sci. Technol.

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The application of single-electron devices is restricted to temperatures at which Coulomb blockade occurs. The most critical parameter of the devices is the tunnelling capacitance. Operation at liquid helium temperature, for example, requires tunnelling capacitances of the order of 20 aF. To realize such low capacitances, advanced electron-beam lithography below 20 nm is mandatory in fabrication schemes proposed up to now. Here we will present a new fabrication process that is capable of tunnelling capacitances as small as 1.5 aF with relaxed technological requirements at the same time. The detailed studies of Coulomb blockades at 20 K currently made may define the route to 77 K operation.

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2004

Nanotechnology

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Preparation of self-aligned in-line tunnel junctions for applications in single-charge electronics

Cited by 13 publications

References 4 publications

Double oxidation scheme for tunnel junction fabrication

Double oxidation scheme for tunnel junction fabrication

A possible road to 77 K single-electron devices

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