Preparation of preselected areas of silicon wafers for transmission electron microscopy

Bohg, A.; Mirbach, E; Schneider, Ling

doi:10.1088/0022-3735/11/2/016

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1979

1989

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“…We found it necessary to develop a new preparation technique (Bohg and Mirbach 1973) to meet the objectives of a TEM failure analysis, in particular, the high lateral accuracy required for further TEM investigation with a 100 kV instrument.…”

Section: Introductionmentioning

confidence: 99%

The separation of uranium isotopes by chemical isotopic exchange

Nikitenko¹

1989

Russ. Chem. Rev.

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A technique is described that allows the routine preparation of preselected areas, such as leaky p-n junctions on silicon wafers, for transmission electron microscopy. The method yields thick, mechanically stable specimens with an electron-transparent centre, the thinnest part being at the preselected position. The crystal is first thinned by local ultrasonic dimpling from the reverse side, and then is chemically etched to the required final thickness. The technique may possibly be used for other non-ductile materials such as germanium, gallium arsenide, glasses, garnet crystals, ceramics, etc.

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Section: Introductionmentioning

confidence: 99%

The separation of uranium isotopes by chemical isotopic exchange

Nikitenko¹

1989

Russ. Chem. Rev.

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“…This combination of small sample area and poor lateral positioning makes chemical etching unsatisfactory for the types of grain boundary studies described above. Chemical etching in conjunction with mechanical processing has produced small area foils at preselected locations in single crystal Si (10) but has not been applied to polycrystalline samples of brittle compound semiconductors.…”

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confidence: 99%