2001
DOI: 10.1016/s0379-6779(00)01232-7
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Preparation of polyperinaphthalene thin films by excimer laser ablation

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“…[7][8][9] In recent years, particularly, preparation of PPN films by laser ablation has been attracted a great deal of attention. [8,[10][11][12][13] In our previous paper [ 11 ], amorphous organic semiconducting thin films with PPN component named polyperinaphthalenic organic semiconductor (PPNOS) [5] were prepared by excimer laser ablation (ELA) of 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA), with a 308nm (XeCI) beam on a substrate at 300 °C . although the film possessed the structural defects such as existence of radicals and depletion of hydrogen atoms.…”
Section: Introductionmentioning
confidence: 99%
“…[7][8][9] In recent years, particularly, preparation of PPN films by laser ablation has been attracted a great deal of attention. [8,[10][11][12][13] In our previous paper [ 11 ], amorphous organic semiconducting thin films with PPN component named polyperinaphthalenic organic semiconductor (PPNOS) [5] were prepared by excimer laser ablation (ELA) of 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA), with a 308nm (XeCI) beam on a substrate at 300 °C . although the film possessed the structural defects such as existence of radicals and depletion of hydrogen atoms.…”
Section: Introductionmentioning
confidence: 99%