Preparation of p-type semiconductor perovskite La1–Sr CoO3 films and their p–n heterostructure devices

Takashima, Hiroshi; Kikuchi, Naoto; Kawanaka, Hirofumi; Tonooka, Kazuhiko; Aiura, Y.

doi:10.1016/j.apsusc.2017.06.047

Cited by 3 publications

(3 citation statements)

References 20 publications

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“…In comparison with Cu + -based p-type oxides, the localization of O 2p orbitals is reduced from hybridization with metal d orbitals using a method called “chemical modulation of the valence band” (CMVB) [ 136 ]. The correlated metal oxides, Cr 2 O 3 , V 2 O 3 , LaCrO 3 , LaVO 3 , and LaCoO 3 , were identified to be p-type TCOs [ 33 , 42 , 137 – 139 ]. The VB consists of a hybridization between O 2p orbitals and transition metal 3d orbitals, leading to a reduction of the hole localization at the top of VB.…”

Section: P-type Perovskitesmentioning

confidence: 99%

“…Meanwhile, the films exhibited a high transmittance up to 70%, indicating that they possess the potential to be a high performance p-type TCO. Takashima et al [ 139 ] grew p-type La 0.67 Sr 0.33 CoO 3 films on a SrTiO 3 substrate by controlling the oxygen atmosphere and prepared p-n heterostructure. Furthermore, p-BaSnO 3 :K/n-BaSnO 3 :La whole perovskite p-n junctions were reported, and results show that they are stable at elevated temperatures (up to 300 °C) [ 141 ].…”

Section: P-type Perovskitesmentioning

confidence: 99%

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Perovskite oxides as transparent semiconductors: a review

Yang

et al. 2020

Nano Convergence

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Traditional transparent conducting oxides (TCOs) have been widely used for various optoelectronic applications, but have the trade-off between conductivity and transmittance. Recently, perovskite oxides, with structural and chemical stability, have exhibited excellent physical properties as new TCOs. We focus on SrVO3-based perovskites with a high carrier concentration and BaSnO3-based perovskites with a high mobility for n-type TCOs. In addition, p-type perovskites are discussed, which can serve as potential future options to couple with n-type perovskites to design full perovskite based devices.

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Section: P-type Perovskitesmentioning

confidence: 99%

Section: P-type Perovskitesmentioning

confidence: 99%

Perovskite oxides as transparent semiconductors: a review

Yang

et al. 2020

Nano Convergence

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“…[ 1,2 ] In recent years, perovskite oxide heterostructures have attracted a lot of attention due to its potential applications compared with traditional p–n junctions. [ 3–6 ] As perovskite oxides have exotic electronic states, [ 7–9 ] the heterostructures which is composed of perovskite oxides, show plenty of interesting physical properties, such as rectifying characteristics, [ 10,11 ] photovoltaic effect, [ 12–14 ] positive colossal magnetoresistance, [ 15,16 ] resistive switching effect, [ 17 ] and so on. Numerous perovskite oxide heterostructures were developed for compound functional application, such as all‐oxide diode, memristor, solar cell, photodetector, and so on.…”

Section: Figurementioning

confidence: 99%

Rectifying Characteristics of the Perovskite Oxide La_1−xSr_xMnO₃/Nb‐0.7 wt%‐Doped SrTiO₃ Heterojunction

Zhang

Liu

Wang

et al. 2020

Physica Rapid Research Ltrs

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The influence of Sr‐doping on the rectifying characteristics of the perovskite oxide La1−xSrxMnO3/Nb‐0.7 wt%‐doped SrTiO3(LSMO/NSTO) heterojunction is studied systematically. Clear rectification characteristics are observed in the Au/LSMO/NSTO heterojunction with Sr‐doping rate of 0.1–0.6 at 300 K. The threshold voltage and Schottky barrier height increase linearly with the increase in Sr‐doping. Combined with first‐principles calculations, it is found that the variation of Sr‐doping concentration directly leads to a change in the LSMO work function, then a change in barrier height, and finally a change in the threshold voltage and rectification characteristics. Ultimately, it is proved that the rectification characteristics of the perovskite metal oxide heterostructure are consistent with the potential barrier mechanism of semiconductors. The rectifying characteristics of the perovskite oxide p–n junction can be well modulated by the change in energy band structure caused by Sr‐doping. These results lay a foundation for further understanding of the rectification characteristics of the perovskite oxide heterostructure and improving its application value.

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Thermoelectric properties of strained, lightly-doped La1–xSrxCoO3 thin films

Viskadourakis

Pervolaraki

Athanasopoulos

et al. 2019

Journal of Applied Physics

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We report on the thermoelectric properties of strained, highly-oriented, lightly-doped La1–xSrxCoO3 thin films, grown on MgO (100) substrates by pulsed laser deposition. The large lattice mismatch (∼9%), along with the different thermal expansion coefficients, between La1–xSrxCoO3 and MgO, result in the incoherent growth of thin films and the generation of a tensile thermal strain (∼1%). Room temperature resistivity values of the films are similar to those of bulk samples, while the temperature dependence of resistivity of the films does not seem to be affected by the thermal strain. The Seebeck coefficient values of all investigated films are positive but lower than those of their bulk counterparts, throughout the measured temperature range. The lower values of the films' Seebeck coefficient are attributed to the stabilization of mixed Co spin state configuration, which is induced by the thermal strain. As a result of the reduced Seebeck coefficient values, the thermoelectric power factor is suppressed, suggesting that the tensile thermal strain does not favor the thermoelectric behavior of the La1–xSrxCoO3.

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Preparation of p-type semiconductor perovskite La1–Sr CoO3 films and their p–n heterostructure devices

Cited by 3 publications

References 20 publications

Perovskite oxides as transparent semiconductors: a review

Perovskite oxides as transparent semiconductors: a review

Rectifying Characteristics of the Perovskite Oxide La_1−xSr_xMnO₃/Nb‐0.7 wt%‐Doped SrTiO₃ Heterojunction

Thermoelectric properties of strained, lightly-doped La1–xSrxCoO3 thin films

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Preparation of p-type semiconductor perovskite La1–Sr CoO3 films and their p–n heterostructure devices

Cited by 3 publications

References 20 publications

Perovskite oxides as transparent semiconductors: a review

Perovskite oxides as transparent semiconductors: a review

Rectifying Characteristics of the Perovskite Oxide La1−xSrxMnO3/Nb‐0.7 wt%‐Doped SrTiO3 Heterojunction

Thermoelectric properties of strained, lightly-doped La1–x­SrxCoO3 thin films

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Product

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About

Rectifying Characteristics of the Perovskite Oxide La_1−xSr_xMnO₃/Nb‐0.7 wt%‐Doped SrTiO₃ Heterojunction

Thermoelectric properties of strained, lightly-doped La1–xSrxCoO3 thin films