Preparation of organic semiconductive thin films by laser ablation: Control of structure and electric properties by selecting wavelength, fluence, and substrate temperature

Abstract

Amorphous organic semiconductive thin films with electric conductivities ranging between 10−5 and 101 Scm−1 are prepared on several temperature‐controlled substrates by excimer laser ablation (ELA) of 3, 4, 9, 10‐perylenetetracarboxylic dianhydride (PTCDA) with 193 nm (ArF), 248 nm (KrF) and 308 nm (XeCl) beams. The structure, electric conductivity, and carrier species of the prepared films depend strongly on the ablation wavelength, fluence, and substrate temperature. Thermoelectromotive force measurements demonstrate conversion of carrier species from n‐type to p‐type with increasing fluence of a 308‐nm beam from 0.2 to 4.0 Jcm−2pulse−1. A film prepared on a substrate at 300 °C by ELA with a 308‐nm beam partially contains a polyperinaphthalene (PPN) structure with electric conductivity of 10−2 to 10−1 Scm−1. © 1998 Scripta Technica, Electr Eng Jpn, 125(2): 19–26, 1998

Preparation of Polyperinaphthalene Films by Laser Ablation of PTCDA/Metal Target.

“…[7][8][9] In recent years, particularly, preparation of PPN films by laser ablation has been attracted a great deal of attention. [8,[10][11][12][13] In our previous paper [ 11 ], amorphous organic semiconducting thin films with PPN component named polyperinaphthalenic organic semiconductor (PPNOS) [5] were prepared by excimer laser ablation (ELA) of 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA), with a 308nm (XeCI) beam on a substrate at 300 °C . although the film possessed the structural defects such as existence of radicals and depletion of hydrogen atoms.…”