2021
DOI: 10.1016/j.tsf.2020.138471
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Preparation of optically transparent and conducting radio-frequency sputtered indium tin oxide ultrathin films

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Cited by 7 publications
(3 citation statements)
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“…Figure 8(a) shows the lowered sheet resistance for the samples of t ITO = 170 nm at 𝑡 Sn = 1.0 nm when the annealing temperature 𝑇 A was increased from 260 to 400 ∘ C. This indicates that the diffusion of Sn was promoted due to the increase in the annealing temperature. A slight increase in R □ at 𝑡 Sn = 2.0 nm even at higher annealing temperature is attributed to the formation of a stable oxide due to an increase of the internal Sn concentration in the ITO film [13][14][15][16][17][18][19]. Therefore, any further increase in the Sn content could lead to a decrease in the sheet resistance, R □ .…”
Section: Type T Ito [Nm]mentioning
confidence: 99%
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“…Figure 8(a) shows the lowered sheet resistance for the samples of t ITO = 170 nm at 𝑡 Sn = 1.0 nm when the annealing temperature 𝑇 A was increased from 260 to 400 ∘ C. This indicates that the diffusion of Sn was promoted due to the increase in the annealing temperature. A slight increase in R □ at 𝑡 Sn = 2.0 nm even at higher annealing temperature is attributed to the formation of a stable oxide due to an increase of the internal Sn concentration in the ITO film [13][14][15][16][17][18][19]. Therefore, any further increase in the Sn content could lead to a decrease in the sheet resistance, R □ .…”
Section: Type T Ito [Nm]mentioning
confidence: 99%
“…By doping Sn to In 2 O 3 , a material having excellent optical and electrical properties can be produced, but if Sn is inserted in amounts beyond a certain level, a stable oxide such as In 4 Sn 3 O 12 , Sn 2 O x , or the like, is formed to suppress the movement of free charge and this deteriorates its electrical performance. The proper Sn content is known to be about 5-10 % [13][14][15][16][17][18][19]. When ITO is manufactured, a circular or rectangular target is employed, and the ITO target is manufactured by a sintering method in which raw material powder is mixed in a predetermined ratio, molded and sintered using a dry method or a wet method, and finally ground by a machine [20,21].…”
Section: Introductionmentioning
confidence: 99%
“…Transparent film, as an important industrial component, is widely used in modern optics, semiconductors, displays, and other related scientific and technological fields [1][2][3]. The thickness of thin films produced by physical or chemical deposition methods is directly related to the optical properties, barrier performance, and tensile properties of subsequent applications [4][5][6]. However, multiple production factors such as emission characteristics, preparation environment, relative position placement, and surface shape of the plated parts, might result in uneven thickness distribution, which ultimately affects the product quality [7][8][9].…”
Section: Introductionmentioning
confidence: 99%