Preparation of Mn doped CeO 2  nanoparticles with enhanced ferromagnetism

Ravi, S.; Shashikanth, F. Winfred

doi:10.1016/j.matchemphys.2017.03.032

Cited by 20 publications

(1 citation statement)

References 15 publications

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“…Additionally, 15 mol% of Mn was doped into the ceria lattice by Kumar et al 50 via the solid‐state mixing of high‐purity oxides. Ravi et al 51 also doped Mn into the ceria lattice by hydrothermal synthesis; however, the extent of Mn substitution was not clearly mentioned. Amounts of up to 10 and 20 mol% of Zn were doped into the ceria lattice by wet chemistry synthesis, as reported by Song et al 52 and Nurhasanah et al, 53 respectively.…”

Section: Resultsmentioning

confidence: 99%

Effect of transition metal doping on the sintering and electrochemical properties of GDC buffer layer in SOFCs

Rehman

Shaur

Kim

et al. 2020

Int J Applied Ceramic Tech

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A dense Ce0.9Gd0.1O2−d (GDC) interlayer is an essential component of the SOFCs to inhibit interfacial elemental diffusion between zirconia‐based electrolytes (eg YSZ) and cathodes. However, the characteristic high sintering temperature of GDC (>1400°C) makes it challenging to fabricate an effective highly dense interlayer owing to the formation of more resistive (Zr,Ce)O2 interfacial solid solutions with YSZ at those temperatures. To fabricate a useful GDC interlayer, we studied the influence of transition metal (TM) (Co, Cu, Fe, Mn, & Zn) doping on the sintering and electrochemical properties of GDC. Dilatometry data showed dramatic drops in the necking and final sintering temperatures for the TM‐doped GDCs, improving the densification of the GDC in the order of Fe > Co > Mn > Cu > Zn. However, the electrochemical impedance data showed that among various transition metal dopants, Mn doping resulted in the best electrochemical properties. Anode supported SOFCs with Mn‐doped, nano, and commercial‐micron GDC interlayers were compared with regard to their performance and stability levels. Although all of the SOFCs showed stable performance, the SOFC with the Mn‐doped GDC interlayer showed the highest power density of 1.14 W cm−2 at 750°C. Hence, Mn‐doped GDC is suggested for application as an effective diffusion barrier layer in SOFCs.

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