2005
DOI: 10.1016/j.jmatprotec.2005.02.172
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Preparation of materials based on Ti–Si–C system using high temperature–high pressure method

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Cited by 27 publications
(9 citation statements)
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“…During the high-temperature and highpressure synthesis process the Si-C bonds form between the melting Si and diamond, which ensures the bonding of diamond particles. The synthesis technology of PCD with SiC bonding phase was proposed early and has been applied commercially [18,19]. The size of diamond powder ranged from 20 to 30 μm as shown in Fig.…”
Section: Materials Synthesismentioning
confidence: 99%
“…During the high-temperature and highpressure synthesis process the Si-C bonds form between the melting Si and diamond, which ensures the bonding of diamond particles. The synthesis technology of PCD with SiC bonding phase was proposed early and has been applied commercially [18,19]. The size of diamond powder ranged from 20 to 30 μm as shown in Fig.…”
Section: Materials Synthesismentioning
confidence: 99%
“…Under such conditions, the effective time required to carry out the sintering process is very short, not exceeding, in fact, a few minutes. Sinters obtained by this method are characterised by a nearly hundredpercent degree of compaction [3].…”
Section: Introductionmentioning
confidence: 99%
“…Vc = 150 m/min. Warunki procesu nagniatania ślizgowego kompozytem diamentowych z ceramiczną fazą wiążącą Ti3SiC2 [26,27], który jest wytwarzany w IZTW dobrano w oparciu o wcześniejsze badania optymalizacyjne [28]. Wyniki tych badań pozwoliły na określenie najkorzystniejszych parametrów wpływających na wygładzenie powierzchni nagniatanej przy posuwie f = 0,02 mm/obr.…”
Section: Nagniatanie Wspomagane Obróbką Cieplno-chemicznąunclassified