Preparation of iron cobaltite thin films by RF magnetron sputtering

Abstract

International audienceIron cobaltite thin films with spinel structure have been elaborated by radio-frequency (RF) magnetronsputtering from a Co1.75Fe1.25O4 target. Influence of argon pressure on structure, microstructure and physicalproperties of films has been examined. Iron–cobalt oxide thin films essentially consist of one spinel phasewhen deposited at low pressure (0.5 and 1.0 Pa). At high pressure (2.0 Pa), the global stoichiometry of the filmis changed which results in the precipitation of a mixed monoxide of cobalt and iron beside the spinel phase.This in-situ reduction due to an oxygen loss occurring mainly at high deposition pressure has been revealed byX-ray diffraction and Raman spectroscopy. Microstructural evolution of thin film with argon pressure has beenshown by microscopic observations (AFM and SEM). The evolution of magnetic and electrical properties, versusargon pressure, has been also studied by SQUID and 4 point probe measurements

Thermoelectric and Transport Properties of Delafossite CuCrO2:Mg Thin Films Prepared by RF Magnetron Sputtering

“…Pre-cleaned fused silica substrates (25 mm × 25 mm, ≃1 mm thick) placed on a water-cooled sample holder were used during the deposition. In order to avoid the reduction of the target, a low argon pressure [86] was used during the sputtering process. The deposition parameters are summarized in the Table 1.…”

FIB plan view lift-out sample preparation for TEM characterization of periodic nanostructures obtained by spinodal decomposition in Co1.7Fe1.3O4 thin films

“…The alternations of cobalt rich and iron rich spinel phases due to spinodal decomposition in Co-Fe-O system have already been observed in well-crystallized thin films or powders initially synthesized at 900 °C and subsequently annealed at 700 °C [19,20] or in films deposited under magnetic field on single crystal substrates by pulsed laser deposition [21]. In the recent studies, the Co 1.75 Fe 1.25 O 4 thin films were directly prepared by radio-frequency sputtering [22]. Thanks to this method, which generates only very moderate temperature elevations, the nano-crystallized films have been obtained.…”

Integration of P-CuO Thin Sputtered Layers onto Microsensor Platforms for Gas Sensing

“…The thicknesses of the deposited films were set to 50 nm on microsensors and 300 nm for the structural characterizations on fused silica substrates. In the case of copper oxides that can have multiple valences of copper, like in tenorite CuO (Cu II ), paramélaconite Cu 4 O 3 (mixed Cu I /Cu II ) or cuprite Cu 2 O (Cu I ), high deposition pressure could lead to a reduction [ 60 ] of the CuO target and the deposition of a phase with lower valences states. Moreover, as the layer had to be integrated by a wet process, a low deposition pressure of 0.5 Pa was preferred to obtain dense [ 61 ] oxide layer.…”