Preparation of indium tin oxide (ITO) thin film with (400) preferred orientation by sol–gel spin coating method

Dong, Le; Zhu, Guisheng; Xu, Hui; Xia, Jiang; Zhang, X. Y.; Zhao, Yunyun; Yan, Dongliang; Yuan, Le; Yu, Aibing

doi:10.1007/s10854-019-01126-1

Cited by 44 publications

(26 citation statements)

References 23 publications

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“…This is in agreement with previous studies that indicate (400) planes enable a higher carrier injection -meaning free electrons-into the ITO in comparison with (222) planes. [20] We found that ITO introduces several energy levels around the Fermi level in all our interface models seeing the band structure of the interface estimated for the Γ-Μ-Κ-Γ path (Fig. 2(a)); these additional energy levels leave an altered electronic structure compared to the band structure of isolated MoS 2 under bulk conditions (Fig.…”

Section: Electronic Structure Of Ito-mos 2 Interfacesmentioning

confidence: 58%

“…[19] ITO is predicted to have preferential growth along [111] and [100] directions which signifies (222) and (400) planes as commonly observed on ITO layers deposited by RF sputtering technique. [20] We estimated that the quality of the interface can be greatly improved whereby variation of the deposition parameters such as deposition time, RF power, and chamber conditions, i.e., as proposed by Samassekou et al [21] In addition, achieving a well-defined interface can be attributed to the presence of an oxidized surface (ITO surface) in contact with the MoS 2 as previously stated by Muratore et al where authors indicated that transition metal dichalcogenides growth are favored by oxygen-rich surfaces. [22] The prediction of ITO preferential growth makes sense by computing the surface energy (γ) values of each surface considered in our DFT study compared to a hypothetical ITO surface.…”

Section: Atom Probe Tomography and Rf Sputteringmentioning

confidence: 99%

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The electronic states of ITO–MoS2: Experiment and theory

et al. 2021

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We report a combination of experimental results with density functional theory (DFT) calculations to understand electronic structure of indium tin oxide and molybdenum disulfide (ITO–MoS2) interface. Our results indicate ITO and MoS2 conform an n-type Schottky barrier of c.a. − 1.0 eV due to orbital interactions; formation of an ohmic contact is caused by semiconducting and metal behavior of ITO as a function of crystal plane orientation. ITO introduces energy levels around the Fermi level in all interface models in the Γ-Μ-Κ-Γ path. The resulted Van der Waals interface and the values of Schottky barrier height enhance electron carrier injection. Graphical abstract

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Section: Electronic Structure Of Ito-mos 2 Interfacesmentioning

confidence: 58%

Section: Atom Probe Tomography and Rf Sputteringmentioning

confidence: 99%

The electronic states of ITO–MoS2: Experiment and theory

et al. 2021

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“…In addition, a highest diffraction peak (222) of the ITO film is observed, which indicates that it is preferentially oriented in the <111> plane. Several research groups have reported that the (222) diffraction peak and (400) diffraction peak, the <100> plane, are related to the oxygen content [10][11][12]. They point out that the <111> plane can accommodate more oxygen atoms, while the <100> plane can accommodate more oxygen vacancies.…”

Section: Resultsmentioning

confidence: 99%

Tuning the optical and electrical properties of HiPIMS-ITO films by variation of annealing temperature

Zhang

Zhao

2022

J. Phys.: Conf. Ser.

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High power impuls magnetron sputtering (HiPIMS) deposits high quality films due to high ionization fraction. In this work, Indium tin oxide (ITO) films are deposited by HiPIMS methord. The effects of annealing temperature under nitrogen environment on the crystal structure, optical properties and electrical properties of ITO films were investigated. The properties of the films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), Hall measurement system (Hall), and UV-Vis spectrophotometer. The results showed that the average visible transmittance of the annealed ITO film reached 83.5%. The XRD results show that the ITO film grain size slightly increased after annealing. The mobility increases after annealing. This study proves that HiPIMS deposited ITO thin film is very superior to low temperature processing, and the grown thin film can be used in LEDs and solar cells.

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“…[54,61,62], sol-gel, data from Refs. [63,64], and colloid processed, data from Refs. [58][59][60] ITO thin films.…”

Section: Electrical Properties Of Ito@ag Thin Filmmentioning

confidence: 99%

“…(a) The figure of merit (FOM) of ITO and ITO@Ag thin films according to the weight percentage of silver and thermal-treatment temperature, and (b) graphical representation of optical transmittance and sheet resistance for sputter, data from Refs [54,61,62],. sol-gel, data from Refs [63,64],. and colloid processed, data from Refs [58][59][60].…”

mentioning

confidence: 99%

Electrically Tunable Solution-Processed Transparent Conductive Thin Films Based on Colloidally Dispersed ITO@Ag Composite Ink

Lim

Kim

et al. 2022

Nanomaterials

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Silver (Ag) introduced colloidal Sn-doped In2O3 (ITO) ink for transparent conductive electrodes (TCEs) was prepared to overcome the limitation of colloidally prepared thin film; low density thin film, high resistance. ITO@Ag colloid ink was made by controlling the weight ratio of ITO and Ag nanoparticles through ball-milling and fabricated using spin coating. These films were dried at 220 °C and heat-treated at 450–750 °C in an air atmosphere to pyrolyze the organic ligand attached to the nanoparticles. All thin films showed high crystallinity. As the thermal treatment temperature increased, films showed a cracked surface, but as the weight percentage of silver increased, a flattened and smooth surface appeared, caused by the metallic silver filling the gap between the nano-particles. This worked as a bridge to allow electrical conduction, which decreases the resistivity over an order of magnitude, from 309 to 0.396, and 0.107 Ω·cm for the ITO-220 °C, ITO-750 °C, and ITO@Ag (7.5 wt.%)-750 °C, respectively. These films also exhibited >90% optical transparency. Lowered resistivity is caused due to the inclusion of silver, providing a sufficient number of charge carriers. Furthermore, the work function difference between ITO and silver builds an ohmic junction, allowing fluent electrical flow without any barrier.

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Preparation of indium tin oxide (ITO) thin film with (400) preferred orientation by sol–gel spin coating method

Cited by 44 publications

References 23 publications

The electronic states of ITO–MoS2: Experiment and theory

The electronic states of ITO–MoS2: Experiment and theory

Tuning the optical and electrical properties of HiPIMS-ITO films by variation of annealing temperature

Electrically Tunable Solution-Processed Transparent Conductive Thin Films Based on Colloidally Dispersed ITO@Ag Composite Ink

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