Preparation of In2O3 and tin-doped In2O3 films by a novel activated reactive evaporation technique

High temperature ferromagnetism in Ni-doped In2O3 and indium-tin oxide

“…ITO has a cubic bixbyite structure with the lattice parameter a = 10.118 Å. 11 Electrical conductivity ͑͒ for best quality ITO samples was found to be ϳ10 4 S / cm. 12 Recently, Yoo et al 13 and He et al 14 have reported both bulk and thin film samples of a diluted magnetic semiconductor-Fe and Cu codoped In 2 O 3 oxide.…”

The effects of surface roughness and nanostructure on the properties of indium tin oxide (ITO) designated for novel optoelectronic devices fabrication

“…ITO films have lattice parameter close to that of In 2 O 3 which lies within the range of 10.2-10.31Å (Nath and Bunshah, 1980). Thus, Sn forms an interstitial bond with oxygen either at SnO or SnO 2 forms, with a valence of +2 or +4, respectively.…”

“…The only way is to create electron degeneracy in a wide band-gap material (E g > 3 eV or more for visible radiation) by controllably introducing non-stoichiometry and/or appropriate dopants. These conditions can be conveniently met for ITO as well as a few other materials mentioned above (Nath and Bunshah, 1980). Nowadays, the technology of optical sensors and solar cells is being more and more important (Bätzner et al, 2000;Terzini et al, 1999Terzini et al, , 2000Guillen and Herrero, 2006;Kerkach et al, 2006).…”

Evaluation of surface roughness and nanostructure of indium tin oxide (ITO) films by atomic force microscopy

“…The only way is to create electron degeneracy in a wide band-gap material (E g 43 eV or more for visible radiation) by controllably introducing nonstoichiometry and/or appropriate dopants. These conditions can be conveniently met for indium tin oxide (ITO) as well as for a few other materials mentioned above (Nath and Bunshah 1980). Nowadays, the technology of optical sensors and solar cells is being considered more and more important (Terzini et al 2000, Guillen and Herrero 2006, Kerkach et al 2006.…”