Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup

Gablech, Imrich; Svatoš, Vojtěch; Caha, Ondřej; Dubroka, Adam; Pekárek, J; Klempa, Jaroslav; Neužil, Pavel; Schneider, Michael; Šikola, Tomáš

doi:10.1016/j.tsf.2018.12.035

Cited by 12 publications

(9 citation statements)

References 39 publications

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“…Micromachines 2020, 11, 143 5 of 10 (001). These peaks positions also perfectly fit residual stress-free values determined from lattice parameters we published earlier [18,20]. Such prepared (001) oriented AlN exhibits a high value of piezoelectric coefficient d33 of (7.33 ± 0.08) pC•N −1 along c-axis.…”

Section: Finite Element Simulationsupporting

confidence: 85%

“…This was followed with a change in the BV to 400 V and the addition of N 2 to the primary ion-beam source, with a ratio of 1:1 to Ar. In addition, we employed the secondary ion-beam source for substrate bombardment, using N 2 plasma at a BV = 30 V and performed reactive sputtering of highly (001) oriented AlN from the Al target, to achieve the desired thickness of ≈1000 nm [20].…”

Section: Chip Design and Fabricationmentioning

confidence: 99%

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Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

et al. 2020

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In this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition. The preferentially (001) orientated AlN thin films possess exceptionally high piezoelectric coefficients d33 of (7.33 ± 0.08) pC∙N−1. The fabrication of PEH was completed using just three lithography steps, conventional silicon substrate with full control of the cantilever thickness, in addition to the thickness of the proof mass. As the AlN deposition was conducted at a temperature of ≈330 °C, the process can be implemented into standard complementary metal oxide semiconductor (CMOS) technology, as well as the CMOS wafer post-processing. The PEH cantilever deflection and efficiency were characterized using both laser interferometry, and a vibration shaker, respectively. This technology could become a core feature for future CMOS-based energy harvesters.

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Section: Finite Element Simulationsupporting

confidence: 85%

Section: Chip Design and Fabricationmentioning

confidence: 99%

Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

et al. 2020

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“…A 25% TMAH bath was used at 10 °C for etching of 1 µm‐thick AlN with excellent (001) orientation on 80 nm of Ti (001) prepared using dual Kaufman ion‐beam source setup according to the published procedures. [ 20 ]…”

Section: Methodsmentioning

confidence: 99%

High‐Conductivity Stoichiometric Titanium Nitride for Bioelectronics

Gablech

Migliaccio

Brodský

et al. 2023

Adv Elect Materials

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Bioelectronic devices such as neural stimulation and recording devices require stable low‐impedance electrode interfaces. Various forms of nitridated titanium are used in biointerface applications due to robustness and biological inertness. In this work, stoichiometric TiN thin films are fabricated using a dual Kaufman ion‐beam source setup, without the necessity of substrate heating. These layers are remarkable compared to established forms of TiN due to high degree of crystallinity and excellent electrical conductivity. How this fabrication method can be extended to produce structured AlN, to yield robust AlN/TiN bilayer micropyramids, is described. These electrodes compare favorably to commercial TiN microelectrodes in the performance metrics important for bioelectronics interfaces: higher conductivity (by an order of magnitude), lower electrochemical impedance, and higher capacitive charge injection with lower faradaicity. These results demonstrate that the Kaufman ion‐beam sputtering method can produce competitive nitride ceramics for bioelectronics applications at low deposition temperatures.

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“…Residual stress in AlN thin films is typically quantified through the wafer bow or the wafer curvature method 13,15,20,[22][23][24][25][26][27][28][29][30][31][32] using the Stoney equation. 33 The major limitation of the wafer curvature method is that it is a macroscopic stress evaluation technique that provides an average stress for the entire film.…”

Section: Introductionmentioning

confidence: 99%

Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy

Lundh

Coleman

Song

et al. 2021

Journal of Applied Physics

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In this study, the Raman biaxial stress coefficients K II and strain-free phonon frequencies ω 0 have been determined for the E 2 (low), E 2 (high), and A 1 (LO) phonon modes of aluminum nitride, AlN, using both experimental and theoretical approaches. The E 2 (high) mode of AlN is recommended for the residual stress analysis of AlN due to its high sensitivity and the largest signal-to-noise ratio among the studied modes. The E 2 (high) Raman biaxial stress coefficient of −3.8 cm −1 /GPa and strain-free phonon frequency of 656.68 cm −1 were then applied to perform both macroscopic and microscopic stress mappings. For macroscopic stress evaluation, the spatial variation of residual stress was measured across an AlN-on-Si wafer prepared by sputter deposition. A cross-wafer variation in residual stress of ∼150 MPa was observed regardless of the average stress state of the film. Microscopic stress evaluation was performed on AlN piezoelectric micromachined ultrasonic transducers (pMUTs) with submicrometer spatial resolution. These measurements were used to assess the effect of device fabrication on residual stress distribution in an individual pMUT and the effect of residual stress on the resonance frequency. At ∼20 μm directly outside the outer edge of the pMUT electrode, a large lateral spatial variation in residual stress of ∼100 MPa was measured, highlighting the impact of metallization structures on residual stress in the AlN film.

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Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup

Cited by 12 publications

References 39 publications

Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

High‐Conductivity Stoichiometric Titanium Nitride for Bioelectronics

Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy

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