Preparation of high-quality CuGa2O4 film via annealing process of Cu/β-Ga2O3

Shi, Jianjun; Liang, Hongwei; Xia, Xiaochuan; Li, Zhuo; Ze, Long; Zhang, Heqiu; Liu, Yang

doi:10.1007/s10853-019-03666-7

Cited by 9 publications

(5 citation statements)

References 18 publications

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“…These XRD peak positions and their relative intensities are well matched with bulk crystals and consistent with (-201) oriented β-Ga2O3 bulk crystals. [21] A typical  rocking curve is shown in the inset, revealing a full width at half maximum (FWHM) of 0.21 o , comparable with the reported value for PLD grown (-201) -Ga2O3 films on a c-sapphire substrate. [22] A Tauc plot analysis of optical absorption data, shown in Supplemental Material Fig.…”

Section: Resultssupporting

confidence: 83%

Red luminescence in H-doped β−Ga2O3

Huynh

Chikoidze

Irvine

et al. 2020

Phys. Rev. Materials

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The effects of hydrogen incorporation into -Ga2O3 thin films have been investigated by chemical, electrical and optical characterization techniques. Hydrogen incorporation was achieved by remote plasma doping without any structural alterations of the film; however, Xray photoemission reveals major changes in the oxygen chemical environment. Depth-resolved cathodoluminescence (CL) reveals that the near-surface region of the H-doped Ga2O3 film exhibits a distinct red luminescence (RL) band at 1.9 eV. The emergence of the H-related RL band is accompanied by an enhancement in the electrical conductivity of the film by an order of magnitude. Temperature-resolved CL points to the formation of abundant H-related donors with a binding energy of 28 ± 4 meV. The RL emission is attributed to shallow donor-deep acceptor pair recombination, where the acceptor is a VGa-H complex and the shallow donor is interstitial H. The binding energy of the VGa-H complex, based on our experimental considerations, is consistent with the computational results by Varley et al.

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Section: Resultssupporting

confidence: 83%

Red luminescence in H-doped β−Ga2O3

Huynh

Chikoidze

Irvine

et al. 2020

Phys. Rev. Materials

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“…An early attempt to synthesize a p-type TCO from CuAlO 2 by the laser ablation method was reported by Kawazoe et al [13]. Recently, researchers have been looking at the copper indium oxide-and copper gallium oxide-based thin film materials for possible p-type TCO applications [14][15][16][17][18][19][20][21][22][23][24][25][26][27]. Nair et al fabricated a transparent thin-film p-n junction consisting of Ca and tin-doped CuInO 2 [28].…”

Section: Introductionmentioning

confidence: 99%

Annealing Studies of Copper Indium Oxide (Cu2In2O5) Thin Films Prepared by RF Magnetron Sputtering

et al. 2021

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Copper indium oxide (Cu2In2O5) thin films were deposited by the RF magnetron sputtering technique using a Cu2O:In2O3 target. The films were deposited on glass and quartz substrates at room temperature. The films were subsequently annealed at temperatures ranging from 100 to 900 °C in an O2 atmosphere. The X-ray diffraction (XRD) analysis performed on the samples identified the presence of Cu2In2O5 phases along with CuInO2 or In2O3 for the films annealed above 500 °C. An increase in grain size was identified with the increase in annealing temperatures from the XRD analysis. The grain sizes were calculated to vary between 10 and 27 nm in films annealed between 500 and 900 °C. A morphological study performed using SEM further confirmed the crystallization and the grain growth with increasing annealing temperatures. All films displayed high optical transmission of more than 70% in the wavelength region of 500–800 nm. Optical studies carried out on the films indicated a small bandgap change in the range of 3.4–3.6 eV during annealing.

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“…15 There has been a recent spike in research interest in synthesizing p-type conducting copper indium oxide and copper gallium oxide TCO. [16][17][18][19][20][21][22][23][24][25][26][27][28] The two phases of Cu-In-based oxide include CuInO 2 and Cu 2 In 2 O 5 . Even though there has been a lot of research focused on developing CuInO 2 thin films, investigation geared towards developing a singlephase Cu 2 In 2 O 5 thin films has been lacking.…”

mentioning

confidence: 99%

Investigation on the Intermixing of Cu and In Layers for the Formation of Cu₂In₂O₅ Thin Films

Sundaresh

Saikumar

Sundaram

2022

ECS J. Solid State Sci. Technol.

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Synthesis of Cu2In2O5 thin films using intermixing of Cu and In layers deposited using radio-frequency magnetron sputtering technique has been utilized for the first time. The layered structure was subjected to post-deposition annealing at temperatures varying from 700 to 1000°C in a constant oxygen ambiance for five hours. X-ray diffraction analysis confirmed the formation of single-phase Cu2In2O5 thin films at 900°C. An increase in the grain size with an increase in the annealing temperature was noticed from the field emission scanning electron microscopy images. Optical studies were performed on all the annealed films in the 200-2000 nm wavelength range. The bandgap was in the range of 2.88 to 3.46 eV for the films annealed between 700 and 900°C.

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Preparation of high-quality CuGa2O4 film via annealing process of Cu/β-Ga2O3

Cited by 9 publications

References 18 publications

Red luminescence in H-doped β−Ga2O3

Red luminescence in H-doped β−Ga2O3

Annealing Studies of Copper Indium Oxide (Cu2In2O5) Thin Films Prepared by RF Magnetron Sputtering

Investigation on the Intermixing of Cu and In Layers for the Formation of Cu₂In₂O₅ Thin Films

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Preparation of high-quality CuGa2O4 film via annealing process of Cu/β-Ga2O3

Cited by 9 publications

References 18 publications

Red luminescence in H-doped β−Ga2O3

Red luminescence in H-doped β−Ga2O3

Annealing Studies of Copper Indium Oxide (Cu2In2O5) Thin Films Prepared by RF Magnetron Sputtering

Investigation on the Intermixing of Cu and In Layers for the Formation of Cu2In2O5 Thin Films

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Investigation on the Intermixing of Cu and In Layers for the Formation of Cu₂In₂O₅ Thin Films