We show that the electrical properties of polymer thin-film transistors can be enhanced by doping poly͑3-hexylthiophene͒ ͑P3HT͒ with HAuCl 4 . Specifically, the addition of HAuCl 4 causes an increase in the two-dimensional molecular ordering of P3HT and a remarkable reduction in the contact resistance at the electrode/semiconductor interface with no pre-or post-treatment process. This phenomenon is understood in terms of broadening of the transport manifold in the organic semiconductor, induced by HAuCl 4 , which results in a reduction in the hole-injection barrier and an enhancement of the interfacial stability at the contact between the printed electrode and the semiconductor layers.Organic field-effect transistors ͑OFETs͒ have stimulated considerable interest because of their many possible applications in low cost, large-area electronics, including flexible paperlike displays, woven electrotextiles, low cost identification tags and so on. 1-8 In the operation of OFETs, charge carrier transport is strongly dependent on the properties of two kinds of interfaces, namely, the interfaces between semiconductors and electrodes ͑where charge injection occurs from the electrodes to the semiconductors 9,10 ͒ and the interfaces between semiconductors and insulators ͑where charge transport takes place within the semiconductor layer͒. These interfacial properties determine the device performance. Recently, the electrical performance of thin-film transistors was limited by the properties of the electrode/semiconductor interface. 11-13 These findings indicate that the contact resistances of the source/drain ͑S/D͒ electrodes are important in determining the device performance. The injection at the metal/semiconductor interface and the contact resistance can predominate over the channel resistance, especially when the size of the device is reduced. The doping of semiconductors was reported to be effective in reducing the contact resistance in organic and inorganic semiconductor devices. 14-18 To date, however, the contact effect of doping on the contact resistance of inkjet-printed electrodes in OFETs has received little attention.In this article, we report on the addition of HAuCl 4 to poly͑3-hexylthiophene͒ ͑P3HT͒ solutions before film formation to enhance the performance of the obtained OFETs. To clearly demonstrate the source of this improvement, we studied the molecular structure of the HAuCl 4 -doped P3HT thin films and the contact effect at the interface between the printed poly͑3,4-ethylenedioxythiophene͒ ͑PEDOT͒ electrodes doped with polystyrene sulfonic ͑PSS͒ acid, PEDOT/PSS, and the P3HT film.
ExperimentalRegioregular P3HT was obtained from Rieke Metals Inc. ͑M n = 45-50 kg/mol͒. The coupling ratio of head-tail to head-head and tail-tail was estimated to be 90% by NMR integration. Hydrogen tetrachloroaurate͑III͒ trihydrate ͑HAuCl 4 ·3H 2 O͒ was used as received from Aldrich. Highly doped Si wafers were used as both the transistor substrate and the gate electrode. A thermally grown silicon dioxide ͑SiO 2 ͒ layer ͑wit...