Preparation of Ge quantum crystallites embedded in a-SiNx matrix by the PECVD method

Qu, Xuexuan; Chen, K.-J.; Wang, M.-X.; Li, Z.F.; Shi, Weihua; Ding, Feng

doi:10.1016/0038-1098(94)90118-x

Cited by 4 publications

(2 citation statements)

References 10 publications

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“…Their scant Raman data indicate the presence of Ge-Ge modes. In a separate report [6] the same team reported detailed X-ray data and little else. In this work, we prepared Ge nanocrystals in SiN x matrix using PECVD and studied both the as-grown as well as furnace annealed samples using Raman scattering and photoluminescence measurements.…”

Section: Introductionmentioning

confidence: 99%

Formation of Ge nanocrystals and SiGe in PECVD grown SiNx:Ge thin films

Dâna

Tokay

Aydınlı

2006

Materials Science in Semiconductor Processing

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Cataloged from PDF version of article.ormation of Ge nanocrystals in SiNx matrices has been studied using plasma enhanced chemical vapor deposition in both as deposited samples as well as in post-vacuum annealed samples. Low temperature and short duration anneals in vacuum resulted in Ge nanocrystals whereas prolonged anneals at higher temperatures resulted in Ge nanocrystals accompanied with SiGe formation at the SiNx/Si interface. Raman Scattering Spectroscopy was extensively used to track the formation of various phonon modes during the diffusion of Ge through SiNx and into the Si substrate. (C) 2006 Published by Elsevier Ltd

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Section: Introductionmentioning

confidence: 99%

Formation of Ge nanocrystals and SiGe in PECVD grown SiNx:Ge thin films

Dâna

Tokay

Aydınlı

2006

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

show abstract

“…• C. It has been found that substrate temperature is a critical parameter for the formation of Ge clusters and the diffusion limited growth model was used to explain the crystallization mechanism of this mate-rial [20]. Ge nanocrystal size was uniform with an average size of 20 nm in a single layer with no distinct size separation.…”

Section: Introductionmentioning

confidence: 99%