Preparation of CuI films by continuous ion layer adsorption reaction (SILAR)

Abstract

Transparent conductive CuI films were prepared on ITO glass substrates using a low-temperature liquid-phase film preparation process, the continuous ion layer adsorption reaction (SILAR) method. The influence of process parameters on the film quality and film surface morphology was investigated, and the relationship between the growth rate of the films and the concentration of the reaction solution as well as the number of cycles was studied and analyzed. The experimental conditions for the preparation of CuI films with the highest transmittance were as follows: the concentration of the anion driving solution was 0.075 mol/L. The film thickness of the CuI films increased with the number of cycles, and films with a thickness of 1.73μm could be produced in 40 cycles. The films were tested by XRD and SEM and showed high purity, flat and dense surface.