Preparation of Cu3N/MoS2 Heterojunction through Magnetron Sputtering and Investigation of Its Structure and Optical Performance

Abstract

Cu3N/MoS2 heterojunction was prepared through magnetron sputtering, and its optical band gap was investigated. Results showed that the prepared Cu3N/MoS2 heterojunction had a clear surface heterojunction structure, uniform surface grains, and no evident cracks. The optical band gap (1.98 eV) of Cu3N/MoS2 heterojunction was obtained by analyzing the ultraviolet-visible transmission spectrum. The valence and conduction band offsets of Cu3N/MoS2 heterojunction were 1.42 and 0.82 eV, respectively. The Cu3N film and multilayer MoS2 formed a type-II heterojunction. After the two materials adhered to form the heterojunction, the interface electrons flowed from MoS2 to Cu3N because the latter had higher Fermi level than the former. This behavior caused the formation of additional electrons in the Cu3N and MoS2 layers and the change in optical band gap, which was conducive to the charge separation of electrons in MoS2 or MoS2 holes. The prepared Cu3N/MoS2 heterojunction has potential application in various high-performance photoelectric devices, such as photocatalysts and photodetectors.

Mixed-dimensional van der Waals heterostructure enabled gas sensors: fundamentals and applications

“…Liwen et al reported a Cu 3 N/MoS 2 heterostructure with a clear surface without any cracks and uniform grains at the surface. 35 A type-II heterojunction is formed between a layer of Cu 3 N and multilayer MoS 2 . After the formation of the heterojunction, the electrons move from the interface of MoS 2 to Cu 3 N because of a higher Fermi level of Cu 3 N than the MoS 2 .…”

The structural, electronic and optical properties of ZnTe/CdSe/GaSb heterotrilayer: first-principles study

“…Because semiconductors are an important photocatalyst, researchers have been committed to improving the optical properties of a semiconductor for a long time, especially enhancing the absorption of light in the visible range [53,54]. The formation of heterostructures by coupling different semiconductor materials has been proven theoretically and experimentally to be an effective method to improve the optical properties of semiconductor materials [55,56]. Therefore, we studied the optical properties of the C structure of ZnTe/CdSe/GaSb heterotrilayer, including dielectric function and optical absorption, and compared them with the optical properties of each monolayer, as shown in figure 8.…”