Preparation of BiSrCaCuO Superconducting Thin Film by Molecular Beam Epitaxy with NO₂

Abstract

A BiSrCaCuO superconducting thin film was prepared in situ by molecular beam epitaxy with nitric dioxide gas (NO2). Metal sources were coevaporated onto the MgO (100) substrate at the substrate temperature of ∼700°C under the background pressure of the growth chamber of ∼5×10-6 Torr. The deposition speed was ∼1.8 Å/s and the thickness of the thin film was ∼3000 Å. The zero resistance was obtained at 65 K without the annealing steps. The quality of the BiSrCaCuO superconducting thin film prepared with NO2 is comparable to that prepared with distilled ozone under identical growth condition except for the distilled ozone flux intensity. Oxidation behaviors of NO2 were studied and are compared with those of distilled ozone.

Low-temperature growth of by pulsed laser deposition

“…In the PLD experiments, however, there have been few reports using oxidants such as ozone [11,12] and NO 2 [13]. In this work, we show results for the deposition of YBCO superconducting films at lower temperatures by optimizing parameters such as chamber pressure, deposition gases (oxygen or ozone) and the laser fluence.…”