Preparation of Bi2Sr2CaCu2Ox Thin Film by Pulsed Laser Deposition for Optoelectronic Devices Application

Ismail, Raid A.; Hasan, N.; Shaker, Suaad S.

doi:10.1007/s12633-021-01061-z

Cited by 8 publications

(6 citation statements)

References 25 publications

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“…For bulk samples, a refractive index for BSCCO-2212 around 1.9-2 for the real part and 0.3-0.5 for the imaginary part for an illumination wavelength of 488 nm has been reported by polarimeter measurements [43]. Ismail et al [44] obtained a refractive index for BSCCO-2212 thin films with a real part around 2 and an imaginary part of 0.2-0.5 depending on the growing conditions. Similar values are obtained by Hussein et al [45] for thin films of BSCCO-2223 with an almost constant real part of the refractive index around 1.8 and an imaginary part around 0.4-0.5.…”

Section: Resultsmentioning

confidence: 92%

“…To our knowledge, there are only a few reports on the optical properties of BSCCO-2212 in the visible range in the literature [43][44][45]. For bulk samples, a refractive index for BSCCO-2212 around 1.9-2 for the real part and 0.3-0.5 for the imaginary part for an illumination wavelength of 488 nm has been reported by polarimeter measurements [43].…”

Section: Resultsmentioning

confidence: 99%

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Apparent color and Raman vibrational modes of the high-temperature superconductor Bi₂Sr₂CaCu₂O 8+δ exfoliated flakes

Figueruelo-Campanero,

del Campo,

Nieva

et al. 2024

2D Mater.

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Studying and controlling the properties of individual exfoliated materials is one of the first steps towards the fabrication of complex van der Waals systems. In this work, we present a systematic study of optical properties and micro-Raman spectroscopy on exfoliated flakes of the high-temperature superconductor Bi2Sr2CaCu2O8+δ (BSCCO-2212). We demonstrate that these are quick and non-invasive techniques for studying air sensitive materials. The apparent color of BSCCO-2212 exfoliated flakes on SiO2/Si has allowed a rough and fast identification of the number of layers. By analyzing the optical contrast of different flakes we determined the complex refractive index in the visible range and found the optimal combination of illumination wavelength and substrate properties for the identification of flakes with different thickness. In addition, we report the hardening of the most characteristic Raman modes as flake thickness decreases, possibly caused by strain in the BiO and CuO2 planes. Moreover, the evolution of the Raman modes establishes a second approach to determine the thickness of BSCCO-2212 thin flakes. As BSCCO-2212 is a challenging material due to its sensitivity to ambient conditions, the present work provides a guide for the fabrication and characterization of complex van der Waals systems paving the way for studying heterostructures based on unconventional superconductors in the 2D limit.

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Section: Resultsmentioning

confidence: 92%

Section: Resultsmentioning

confidence: 99%

Apparent color and Raman vibrational modes of the high-temperature superconductor Bi₂Sr₂CaCu₂O 8+δ exfoliated flakes

Figueruelo-Campanero,

del Campo,

Nieva

et al. 2024

2D Mater.

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“…Furthermore, rectification features were observed in the GaN/P-Si nanocrystalline film, and recombination tunneling served as the current transport mechanism in both layers 97 – 99 .…”

Section: Resultsmentioning

confidence: 99%

Effect of laser fluence on the optoelectronic properties of nanostructured GaN/porous silicon prepared by pulsed laser deposition

Fakhri,

Jabbar,

AbdulRazzaq

et al. 2023

Sci Rep

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In this study, the fabrication of nanostructured GaN/porous Si by pulsed laser deposition (PLD) was demonstrated. The porous silicon was prepared using laser-assisted electrochemical etching (LAECE). The structural, optical, and electrical properties of GaN films were investigated as a function of laser fluence. XRD studies revealed that the GaN films deposited on porous silicon were nanocrystalline, exhibiting a hexagonal wurtzite structure along the (100) plane. Spectroscopic property results revealed that the photoluminescence PL emission peaks of the gallium nitride over porous silicon (GaN/PSi) sample prepared at 795 mJ/mm2 were centered at 260 nm and 624 nm. According to topographical and morphological analyses, the deposited film consisted of spherical grains with an average diameter of 178.8 nm and a surface roughness of 50.61 nm. The surface of the prepared films exhibited a cauliflower-like morphology. The main figures of merit of the nanostructured GaN/P-Si photodetectors were studied in the spectral range of 350–850 nm. The responsivity, detectivity, and external quantum efficiency of the photodetector at 575 nm under − 3 V were 19.86 A/W, 8.9 × 1012 Jones, and 50.89%, respectively. Furthermore, the photodetector prepared at a laser fluence of 795 mJ/mm2 demonstrates a switching characteristic, where the rise time and fall time are measured to be 363 and 711 μs, respectively.

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“…17 shows the 1/C 2 and voltage characteristics of GaN films deposited at 1064 nm laser wavelength. The fabricated GaN on the Psi film was an abrupt junction, and the value of the built-in potential decreased from 0.34 to 0.31 eV after GaN was deposited at a laser wavelength of 1064 nm [70][71][72][73][74].…”

Section: Electrical Propertiesmentioning

confidence: 99%

Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

Jabbar¹,

Fakhri²,

Razzaq³

et al. 2023

Journal of Renewable Materials

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Gallium nitride (GaN)/porous silicon (PSi) film was prepared using a pulsed laser deposition method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5-15 min at 2.5 min intervals. X-ray diffraction, room-temperature photoluminescence, atomic force microscopy and field emission scanning electron microscopy images, and electrical characteristics in the prepared GaN on the Psi film were investigated. The optimum Psi substrate was obtained under the following conditions: 10 min, 10 mA/cm 2 , and 24% hydrofluoric acid. The substrate exhibited two highly cubic crystalline structures at (200) and (400) orientations and yellow visible band photoluminescence, and homogeneous pores formed over the entire surface. The pores had steep oval shapes and were accompanied by small dark pores that appeared topographically and morphologically. The GaN/Psi film fabricated through PLD exhibited a high and hexagonal crystallographic texture in the (002) plane. Spectroscopic properties results revealed that the photoluminescence emission of the deposited nano-GaN films was in the ultraviolet band (374 nm) related to GaN material and in the near-infrared band (730 nm) related to the Psi substrate. The topographical and morphological results of the GaN films confirmed that the deposited film contained spherical grains with an average diameter of 51.8 nm and surface roughness of 4.8 nm. The GaN/Psi surface showed a cauliflower-like morphology, and the built-in voltage decreased from 3.4 to 2.7 eV after deposition. The fabricated GaN/Psi film exhibited good electrical characteristics.

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Preparation of Bi2Sr2CaCu2Ox Thin Film by Pulsed Laser Deposition for Optoelectronic Devices Application

Cited by 8 publications

References 25 publications

Apparent color and Raman vibrational modes of the high-temperature superconductor Bi₂Sr₂CaCu₂O 8+δ exfoliated flakes

Apparent color and Raman vibrational modes of the high-temperature superconductor Bi₂Sr₂CaCu₂O 8+δ exfoliated flakes

Effect of laser fluence on the optoelectronic properties of nanostructured GaN/porous silicon prepared by pulsed laser deposition

Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

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Preparation of Bi2Sr2CaCu2Ox Thin Film by Pulsed Laser Deposition for Optoelectronic Devices Application

Cited by 8 publications

References 25 publications

Apparent color and Raman vibrational modes of the high-temperature superconductor Bi2Sr2CaCu2O 8+δ exfoliated flakes

Apparent color and Raman vibrational modes of the high-temperature superconductor Bi2Sr2CaCu2O 8+δ exfoliated flakes

Effect of laser fluence on the optoelectronic properties of nanostructured GaN/porous silicon prepared by pulsed laser deposition

Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

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Apparent color and Raman vibrational modes of the high-temperature superconductor Bi₂Sr₂CaCu₂O 8+δ exfoliated flakes

Apparent color and Raman vibrational modes of the high-temperature superconductor Bi₂Sr₂CaCu₂O 8+δ exfoliated flakes