Preparation of As-doped p-type ZnO films using a Zn3As2∕ZnO target with pulsed laser deposition

Vaithianathan, V.; Lee, Byung‐Teak; Kim, Sang Sub

doi:10.1063/1.1854748

Cited by 159 publications

(80 citation statements)

References 15 publications

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“…7 Consequently, recent developments reporting magnetic properties in ZnO have been regarding n-type samples, 8 although the preparation of p-type films has been reported. 9,10 Our measurements on n-type ZnO establish a spin coherence time of ∼190 ps at room temperature, longer than the spin coherence time reported in GaN, 11 another wide band-gap semiconductor. ZnO also has the added advantage that high quality single crystals are commercially available.…”

mentioning

confidence: 89%

Room-temperature spin coherence in ZnO

Ghosh

Sih

Lau

et al. 2005

Applied Physics Letters

126

102

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Time-resolved optical techniques are used to explore electron spin dynamics in bulk and epilayer samples of n-type ZnO as a function of temperature and magnetic field. The bulk sample yields a spin coherence time T * 2 of 20 ns at T = 30 K. Epilayer samples, grown by pulsed laser deposition, show a maximum T * 2 of 2 ns at T = 10 K, with spin precession persisting up to T = 280 K.A lot of attention has been focused on zinc oxide (ZnO) because of material properties that make it well-suited for applications in ultra-violet light emitters, transparent high-power electronics and piezoelectric transducers. In addition, the theoretical work of Dietl et al ., 1 predicting room temperature ferromagnetism for Mn-doped p-type ZnO, has revealed the possibility that ZnO may be an appropriate candidate for spintronics. 2 The magnetic properties of thin films of ZnO with transition ion doping, 3,4,5 are being widely investigated, but practical spintronics applications would also require long spin coherence time and spin coherence length.

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mentioning

confidence: 89%

Room-temperature spin coherence in ZnO

Ghosh

Sih

Lau

et al. 2005

Applied Physics Letters

126

102

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“…In the case of the technologically promising II-VI compound ZnO, besides N [1,2] the heavy group-V elements P [1,2], As [2][3][4][5][6][7][8][9], and Sb [10][11][12] have been reported in the literature as possible p-type dopants. However, there is an ongoing debate whether for P, As, and Sb the p-type character results from these impuritities simply replacing O atoms, thus acting as simple "chemical" dopants [3,4,8], or is due to the formation of more complicated defect complexes [9,[12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

et al. 2007

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We have determined the lattice location of ion implanted As in ZnO and GaN by means of conversion electron emission channeling from radioactive 73 As. In contrast to what one might expect from its nature as a group V element, we find that As does not occupy substitutional O sites in ZnO but in its large majority substitutional Zn sites. Arsenic in ZnO is thus an interesting example for an impurity in a semiconductor where the major impurity lattice site is determined by atomic size and electronegativity rather than its position in the periodic system. In contrast, in GaN the preference of As for substitutional cation sites is less pronounced and about half of the implanted As atoms occupy Ga and the other half N sites. Apparently, the smaller size-mismatch between As and N and the chemical similarity of both elements make it feasible that As partly substitutes for N atoms.

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“…24,34,35 The 3.31 eV emission band commonly observed in undoped and doped ZnO has been suggested as being related to SFs, 36 but also been reported to be attributed to various electron-acceptor pair and exciton transitions. [37][38][39][40] Most reports of p-type ZnO have been for group V elements including N, 41-44 P, 45,46 As, [47][48][49] and Sb 50,51 dopants. The low temperature (LT) PL of the p-type samples utilizing these dopants includes emissions in the energy range of 3.3-3.35 eV.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence study of p-type vs. n-type Ag-doped ZnO films

Myers

Khranovskyy

Jian

et al. 2015

Journal of Applied Physics

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Silver doped ZnO films have been grown on sapphire (0001) substrates by pulsed laser deposition.Hall measurements indicate that p-type conductivity is realized for the films deposited at 500 C and 750 C. Transmission electron microscopy images show more obvious and higher density of stacking faults (SFs) present in the p-type ZnO films as compared to the n-type films. Top view and cross sectional photoluminescence of the n-and p-type samples revealed free excitonic emission from both films. A peak at 3.314 eV, attributed to SF emission, has been observed only for the n-type sample, while a weak neutral acceptor peak observed at 3.359 eV in the p-type film. The SF emission in the n-type sample suggests localization of acceptor impurities nearby the SFs, while lack of SF emission for the p-type sample indicates the activation of the Ag acceptors in ZnO.

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Preparation of As-doped p-type ZnO films using a Zn3As2∕ZnO target with pulsed laser deposition

Cited by 159 publications

References 15 publications

Room-temperature spin coherence in ZnO

Room-temperature spin coherence in ZnO

Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

Photoluminescence study of p-type vs. n-type Ag-doped ZnO films

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