Preparation of antimony selenide thin films by electrochemical deposition and application in optoelectronic devices

Bai, Hang; Li, Yufang; Shen, Honglie; Wang, Long; Li, Hechao; Xie, Zhihong; Chen, Andi; Shi, Zheng; Wang, Wei

doi:10.1016/j.mssp.2023.108027

Cited by 4 publications

(1 citation statement)

References 39 publications

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“…The fabrication of metal selenide thin films by two different metal ions (through metal-doping of metal selenides) appears to yield functional outcomes, especially concerning structural aspects and achieving a desired band-gap. In this regard, copper selenide (CuSe), commonly used in these areas, can improve its structure and band-gap by incorporating other metals as dopants, such as nickel (Ni), copper (Cu), and lead (Pb), leading to new band-to-band optical transitions 3 , 9 – 13 . In existing literature, there is no specific instance of research on nickel-doped copper selenide (Ni-doped CuSe) thin films.…”

Section: Introductionmentioning

confidence: 99%

Exploring secondary optical transitions: a study utilizing the DITM method, and enhanced photocatalytic properties in Ni-doped CuSe

Ghobadi,

Zamani Meymian,

Fallah

2024

Sci Rep

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This study explores the simultaneous presence of two metal ions of Nickel (Ni) and Copper (Cu) on the formation of a metal selenide (Ni-doped CuSe) in an alkaline environment. The impact of Ni ions on creating the second optical transitions is investigated. Different concentrations amounts of Ni ions (0.01, 0.02, and 0.03 mol) are utilized to produce Ni-doped CuSe semiconductor thin films through a chemical solution deposition method with deposition times varying from 3 to 6 h. Absorbance spectra are employed to determine the band-gap, while Field Emission Scanning Electron Microscopy is utilized for morphological analysis. Structural and elemental analyses are conducted using X-ray Diffraction and Energy Dispersive X-ray Spectroscopy techniques. Additionally, a relatively innovative approach for determining the optical transitions, termed the Derivation Ineffective Thickness Method (DITM), is employed. DITM eliminates the need for thin film thickness and assumptions about the type of transition (direct or indirect) for band-gap calculation. Moreover, a comparison is made between the band-gap obtained from the Tauc model and the transitions obtained by DITM method. Furthermore, it is demonstrated that the optical transitions exhibit two distinct band-gaps associated with nickel selenide (NiSe) as second transition and copper selenide (CuSe) as fundamental transition. The presence of Ni is also found to enhance crystal quality. The study also briefly explores the improved photocatalytic properties of CuSe in the presence of Ni.

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Section: Introductionmentioning

confidence: 99%

Exploring secondary optical transitions: a study utilizing the DITM method, and enhanced photocatalytic properties in Ni-doped CuSe

Ghobadi,

Zamani Meymian,

Fallah

2024

Sci Rep

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Recent Advances in Antimony Selenide Photodetectors

Liu,

Chen,

et al. 2024

Advanced Materials

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Photodetectors (PDs) rapidly capture optical signals and convert them into electrical signals, making them indispensable in a variety of applications including imaging, optical communication, remote sensing, and biological detection. Recently, antimony selenide (Sb2Se3) has achieved remarkable progress due to its earth‐abundant, low toxicity, low price, suitable bandgap width, high absorption coefficient, and unique structural characteristics. Sb2Se3 has been extensively studied in solar cells, but there's a lack of timely updates in the field of PDs. A literature review based on Sb2Se3 PDs is urgently warranted. This review aims to provide a concise understanding of the latest progress in Sb2Se3 PDs, with a focus on the basic characteristics and the performance optimization for Sb2Se3 photoconductive‐type and photodiode‐type detectors, including nanostructure regulation, process optimization, and stability improvement of flexible devices. Furthermore, the application progresses of Sb2Se3 PDs in heart rate monitoring, and monolithic‐integrated matrix images are introduced. Finally, this review presents various strategies with potential and feasibility to address challenges for the rapid development and commercial application of Sb2Se3 PDs.

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Fabrication and characterization of C3N4 coating by electrochemical deposition on stainless steel

Liu,

Yan

et al. 2024

Surface and Coatings Technology

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Preparation of antimony selenide thin films by electrochemical deposition and application in optoelectronic devices

Cited by 4 publications

References 39 publications

Exploring secondary optical transitions: a study utilizing the DITM method, and enhanced photocatalytic properties in Ni-doped CuSe

Exploring secondary optical transitions: a study utilizing the DITM method, and enhanced photocatalytic properties in Ni-doped CuSe

Recent Advances in Antimony Selenide Photodetectors

Fabrication and characterization of C3N4 coating by electrochemical deposition on stainless steel

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