Preparation of amorphous organic semiconductor thin films with polyperinaphthalene structure on temperature-controlled substrates by excimer laser ablation of 3,4,9,10-perylenetetracarboxylic dianhydride

Electric Conductivity Measurement of Polyperinaphthalene Thin Films Prepared by Laser Ablation of PTCDA/Co Mixture Target.

“…The full width at half maximum (FWHM) of the peak at 1296cm' for the film prepared at Ts of 300°C was smaller than that for our film prepared previously [5], suggesting that better-defmed PPN films can be obtained by this method. As for the film prepared at TS of 550°C, the peak at 1296cni 1 could not be detected.…”

“…These results indicate that PPN locates in disorder in the film, supporting the result showing amorphous nature of this film by the electron diffraction analysis. [5] Charged particles are hopping three-dimensionally between localized states near the Fermi level derived from defects such as surviving radicals, causing electric conduction. Other electric properties such as magnetic resistance are now under investigation.…”

“…[2,3] In recent years, particularly, preparation of PPN films by laser ablation has been attracted a great deal of attention. [4][5][6] In our previous paper [6], we found that excimer laser ablation (ELA) of mixture targets of 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) with metal powders such as Co (PTCDA/Co) led to increase the yield of "naked" perylene skeletons without side groups by improving the efficiency of elimination of side groups of PTCDA, resulting in more effective preparation of PPN films. (Scheme I) In this paper, electric conductivities were measured for the PPN films prepared on substrates at 20, 300, 400, 500 and 550°C by ELA of PTCDA/Co mixture targets.…”

Preparation of Polyperinaphthalene Films by Laser Ablation of PTCDA/Metal Target.

“…[ 14,15 ] The peak at 128Ocm-1 is due to in-plane C-H bending in perylene structure. [6] The full width at half maximum (FWHM) of the peak at 1280 cm-i for each spectrum is smaller than that of the film prepared previously by ELA of PTCDA target at an appropriate fluence on a substrate at 300°C [11], indicating that the perylene structure is not so cruelly damaged compared with our previous study. It is surprising to note that the sharp peak at 1280 cm-1 is detected for the film prepared even at 2.0 Jem-2pulse-i, considering from the fact that the peak almost completely vanished for the film prepared by ELA of PTCDA at more than 1.0 Jcm-2pulse-i on a substrate at 3 00°C.…”

“…[7][8][9] In recent years, particularly, preparation of PPN films by laser ablation has been attracted a great deal of attention. [8,[10][11][12][13] In our previous paper [ 11 ], amorphous organic semiconducting thin films with PPN component named polyperinaphthalenic organic semiconductor (PPNOS) [5] were prepared by excimer laser ablation (ELA) of 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA), with a 308nm (XeCI) beam on a substrate at 300 °C . although the film possessed the structural defects such as existence of radicals and depletion of hydrogen atoms.…”