Preparation of amorphous CNx thin films by pulsed laser deposition using a radio frequency radical beam source

Aoi, Yoshifumi; Ono, Kojiro; Kamijo, Eiji

doi:10.1063/1.371048

Cited by 72 publications

(25 citation statements)

References 40 publications

(34 reference statements)

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“…Broad absorption band 2 at 1000-1700 cm À1 indicates that the films structure is predominantly amorphous with sp 2 -C vibration modes, and is related to Raman active disordered (D band) and graphite-like (G band) modes [30,31]. Band 3 at 1100-1400 cm À1 , band 4 at 1500-1700 cm À1 and band 5 at around 2200 cm À1 are due to C-N, C@C and/or C@N and C"N stretching vibration modes, respectively [9,32,33]. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…While claims of crystallinity remain unresolved, there have been interesting results on the physical properties of amorphous CN (a-CN x ) films [8]. The a-CN x films is expected to be an interesting new material because it exhibits outstanding properties, such as high value of hardness, low friction, chemical inertness, and variable electrical conductivity and optical band gap [9]. The local structural property that distinguishes potentially superhard and dense C 3 N 4 structures from low-density and softer material is a carbon coordination, which hard materials require sp 3 -C in the C 3 N 4 network, while sp 2 -C will leads much softer materials [10].…”

Section: Introductionmentioning

confidence: 99%

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X-ray photoelectron spectroscopy studies on the bonding properties of oxygenated amorphous carbon nitride thin films synthesized by pulsed laser deposition at different substrate temperatures

Rusop

Soga

Jimbo

2005

Journal of Non-Crystalline Solids

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

X-ray photoelectron spectroscopy studies on the bonding properties of oxygenated amorphous carbon nitride thin films synthesized by pulsed laser deposition at different substrate temperatures

Rusop

Soga

Jimbo

2005

Journal of Non-Crystalline Solids

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“…The tendency to synthesis amorphous carbon nitride is much higher [2,3,4]. Amorphous carbon nitride (a-CN x ) has many interesting properties such as extreme hardness, low friction coefficient, and variable optical band gap [5]. The presence of hydrogen commonly found in carbon nitride films is the reason why carbon nitride tends to form as amorphous films.…”

Section: Introductionmentioning

confidence: 99%

Effect of RF power and annealing on chemical bonding and morphology of a-CNx thin films as humidity sensor

Aziz¹,

Ritikos²,

Kamal³

et al. 2013

AIP Conference Proceedings

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Structural and electronic properties of electron cyclotron resonance plasma deposited hydrogenated amorphous carbon and carbon nitride films Journal of Applied Physics 91, 4154 (2002) Abstract. Amorphous carbon nitride (a-CN x ) thin films were deposited using radio frequency plasma enhanced chemical vapor deposition (rf-PECVD) technique. A set of a-CN x thin films were prepared using pure methane (CH 4 ) gas diluted with nitrogen (N 2 ) gas. The rf power was varied at 50, 60, 70, 80, 90 and 100 W. These films were then annealed at 400 o C in a quartz tube furnace in argon (Ar) gas. The effects of rf power and thermal annealing on the chemical bonding and morphology of these samples were studied. Surface profilometer was used to measure film thickness. Fourier transform infra-red spectroscopy (FTIR) and Field emission scanning electron microscopy (FESEM) measurements were used to determine their chemical bonding and morphology respectively. The deposition rate of the films increased constantly with increasing rf power up to 80W, before decreasing with further increase in rf power. Fourier transform infra-red spectroscopy (FTIR) studies showed a systematic change in the spectra and revealed three main peaks included C-N, C=N, C=C and C≡N triple bond. C=N and C≡N bonds decreased with increased C-N bonds after thermal annealing process. The FESEM images showed that the structure is porous for as-deposited and covered by granule-like grain structure after thermal annealing process was done. The resistance of the a-CN x thin film changed from 23.765 kΩ to 5.845 kΩ in the relative humidity range of 5 to 92 % and the film shows a good response and repeatability as a humidity sensing materials. This work showed that rf power and thermal annealing has significant effects on the chemical bonding and surface morphology of the a-CN x films and but yield films which are potential candidate as humidity sensor device.

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“…Among the above mentioned techniques, the PLD is a promising way to deposit carbon nitride films with enhanced physical, chemical and electrochemical properties because it can be easily carried out even on non-conductive substrates and at low substrate temperatures during film growth. Up to now, most of the works deal with the deposition of a-C:N films by nanosecond pulsed laser deposition [12,21,22]. Recent studies have shown the ability to dope amorphous carbon (a-C) materials by femtosecond pulsed laser deposition (fs-PLD) [18,23] but nitrogen doped a-C films deposited by femtosecond PLD, in particular with plasma assistance, is still largely unexplored.…”

Section: Introductionmentioning

confidence: 99%

High N-content a-C:N films elaborated by femtosecond PLD with plasma assistance

Maddi

Donnet

Loir

et al. 2015

Applied Surface Science

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Amorphous carbon nitride (a-C:N) thin films are a interesting class of carbon-based electrode materials.Therefore, synthesis and characterization of these materials have found lot of interest in environmental analytical microsystems. Herein, we report the nitrogen-doped amorphous carbon thin film elaboration by femtosecond pulsed laser deposition (fs-PLD) both with and without a plasma assistance. The chemical composition and atomic bonding configuration of the films were investigated by multi-wavelength (MW) Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and electron energy-loss spectroscopy (EELS). The highest nitrogen content, 28 at.%, was obtained with plasma assistance. The I(D)/I(G) ratio and the G peak position increased as a function of nitrogen concentration, whereas the dispersion and full width at half maximum (FWHM) of G peak decreased. This indicates more ordered graphitic like structures in the films both in terms of topological and structural, depending on the nitrogen content.EELS investigations were correlated with MW Raman results. The interpretation of XPS spectra of carbon nitride films remains a challenge. Plasma assisted PLD in the femtosecond regime led to a significant high nitrogen concentration, which is highlighted on the basis of collisional processes in the carbon plasma plume interacting with the nitrogen plasma.

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Preparation of amorphous CNx thin films by pulsed laser deposition using a radio frequency radical beam source

Abstract: Articles you may be interested inPreparation of α -Al 2 O 3 thin films by electron cyclotron resonance plasma-assisted pulsed laser deposition and heat annealing

Cited by 72 publications

References 40 publications

X-ray photoelectron spectroscopy studies on the bonding properties of oxygenated amorphous carbon nitride thin films synthesized by pulsed laser deposition at different substrate temperatures

X-ray photoelectron spectroscopy studies on the bonding properties of oxygenated amorphous carbon nitride thin films synthesized by pulsed laser deposition at different substrate temperatures

Effect of RF power and annealing on chemical bonding and morphology of a-CNx thin films as humidity sensor

High N-content a-C:N films elaborated by femtosecond PLD with plasma assistance

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