Preparation of AlSb film by screen printing and sintering method

Computational Correlation analysis of In-doped Aluminium Antimonide Alloy for Optoelectronic Applications: A First Principle Study

“…We used 10 -7 Ry for the convergence of the total energy criterion [19].Total energy calculations are made using full potential linearized augmented plane wave (FP-LAPW) method. In this method, the unit cell is divided into non-overlapping muffin regions and intersticial sites [8][9][10][11][12][13][14][15][16][17][18][19][20]. The wave function in the muffin-tin region is probably atomic-like whereas there is plane-wave basis in the interstitial region.…”

“…Due to this special feature as wide band gap, low effective electronic mass, high thermal conductivity, high electric field, high electronic mobility [3] and strong resistance to radiation these materials are considered to have great interest in the semiconductor industry [2][3].Zinc blend crystalline aluminum antimonide (AlSb) belongs to indirect band gap semiconductor material with 1.669 indirect band gap value [6] and a lattice parameter of 6.135 (Å) [7].This small band gap suppresses radiative recombination and gives the electron-hole pair more time for detection. Also due to their high electronic mobility AlSb are widely used to make other electronic devices for high temperature applications as p-n junctions, diodes, laser, solar spectrum absorption [8] the potential absorber and commonly suitable for solar energy devices [9] Recently, Dhakal et al prepared fine AlSb by suppetring of aluminum and antimony together and showed that the binary alloy AlSb is a promising photovoltaic material [7].Tang et al investigated the structural , electronic (represents the band gape) and optical properties of binary alloy AlSb thin film deposited by laser deposition. Relevant theoretical work has been done recently on mixed ternary crystals.…”

Computational Correlation analysis of In-doped Aluminium Antimonide Alloy for Optoelectronic Applications: A First Principle Study

“…We used 10 -7 Ry for the convergence of the total energy criterion [20].Total energy calculations are made using full potential linearized augmented plane wave (FP-LAPW) method. In this method, the unit cell is divided into non-overlapping muffin regions and intersticial sites [8][9][10][11][12][13][14][15][16][17][18][19][20]. The wave function in the muffin-tin region is probably atomic-like whereas there is plane-wave basis in the interstitial region.…”

“…Due to this special feature as wide band gap, low effective electronic mass, high thermal conductivity, high electric field, high electronic mobility [5] and strong resistance to radiation these materials are considered to have great interest in the semiconductor industry [2][3].Zinc blend crystalline aluminum antimonide (AlSb) belongs to indirect band gap semiconductor material with 1.669 indirect band gap value [8] and a lattice parameter of 6.135 (Å) [9].This small band gap suppresses radiative recombination and gives the electron-hole pair more time for detection. Also due to their high electronic mobility AlSb are widely used to make other electronic devices for high temperature applications as p-n junctions, diodes, laser, solar spectrum absorption [10] the potential absorber and commonly suitable for solar energy devices [11] Recently, Dhakal et al prepared fine AlSb by suppetring of aluminum and antimony together and showed that the binary alloy AlSb is a promising photovoltaic material [9].Tang et al investigated the structural , electronic (represents the band gape) and optical properties of binary alloy AlSb thin film deposited by laser deposition. Relevant theoretical work has been done recently on mixed ternary crystals.…”

“…symmetry and the conduction band minima Camel back at point of L symmetry(Γ-L) shows that AlSb has indirect band gap and the material is optically dormant[9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28]. However by introducing Indium concentrations as in ternary alloy Al1-xInxSb (x = 0, 0.25, 0.50, or 0.75), the minima of conduction band (CB) and the maxima of valence band (VB) shifted at same symmetry point (Γ-Γ).The transformation occurs from indirect band gap to direct band gape and the material becomes optically active[36].…”