Heterostructure tunable LC devices utilizing ferroelectric BST((Ba,Sr)TiO 3 ) and ferromagnetic LSMO((La,Sr)MnO 3 ) thin films were developed. Both LSMO and BST thin films were prepared by chemical solution deposition. New heterostructure tunable devices, which were composed of MIM-type ferroelectric C and spiral-type ferromagnetic L, were fabricated as the following order: ferromagnetic LSMO thin films were deposited on SiO 2 /Si substrate and platinum was deposited as a diffusion barrier and ferroelectric BST thin films were deposited and spiral-type metal (Pt/Ti) coils were patterned using lift-off process. The heterostructure tunable device showed large C-V tunability, 58% and also L-V tunability, 11.5% in voltage ranges of -10 V to + 10 V.1 Introduction Recently, there has been some progress in developing tunable microwave filters and phase shifters utilizing ferroelectric thin films with nonlinear C-V characteristics. RF tunable devices using ferroelectric thin film have faster C-V response, higher power in the GHz frequency range, and could be integrated with smaller and simpler structure as compared with other tunable devices using semiconductors or ferrites [1]. Among various ferroelectric thin films, BST((Ba,Sr)TiO 3 ) thin film is the most attractive candidate for microwave and millimeter-wave frequency devices such as varactors, tunable filters, and tunable phase shifters because of high tunability (field-dependent change of dielectric constant) and low dielectric loss at microwave frequencies [2 -8]. On the other hand, tunable microwave filters and phase shifters utilizing epitaxial ferroelectric/ferromagnetic/superconducting thin films with perovskite structures have been proposed [9]. Because both C and L of a microwave device can be simultaneously changed in this heterostructure, the resonance frequency f r (= 1/2 LC π ) and phase velocity v p (= 1/ LC ) determined by the LC product are very large while maintaining the transmission line characteristic impedance Z 0 (= / L C) that is specially an important property for a phase shifter, resulting in the reduced insertion loss generated between the device and transmission line [9]. Recently, there have been some preliminary reports on tunable microwave filters and phase shifters utilizing layered ferroelectricferromagnetic structure [10,11]. In this work, heterostructure tunable LC devices utilizing ferroelectric BST((Ba,Sr)TiO 3 ) and ferromagnetic LSMO((La,Sr)MnO 3 ) thin films were investigated. The tunable LC devices were composed of MIM-type ferroelectric C and spiral-type ferromagnetic L. LSMO and BST films were prepared on SiO 2 /Si substrates by chemical solution deposition (CSD). C-V and L-V tunabilities of the heterostructure tunable devices were measured. The resonance frequency f r and the