2008
DOI: 10.1016/j.colsurfa.2007.04.138
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Preparation of Al-doped ZnO thin film deposited at room temperature

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Cited by 23 publications
(5 citation statements)
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“…These values were more favorable than those of the AZO thin films fabricated at room temperature by a sputtering technique and were almost the same as those of the thin films deposited by the PLD technique. [23][24][25] The Hall mobility decreases from 11 to 4 cm 2 V À1 s À1 with increase in P O2 . The mobility of the AZO thin films with carrier concentration !10 19 cm À3 was determined by ionized impurity scattering and grain boundary scattering.…”
Section: Optical Propertiesmentioning
confidence: 98%
“…These values were more favorable than those of the AZO thin films fabricated at room temperature by a sputtering technique and were almost the same as those of the thin films deposited by the PLD technique. [23][24][25] The Hall mobility decreases from 11 to 4 cm 2 V À1 s À1 with increase in P O2 . The mobility of the AZO thin films with carrier concentration !10 19 cm À3 was determined by ionized impurity scattering and grain boundary scattering.…”
Section: Optical Propertiesmentioning
confidence: 98%
“…Indium tin oxide (ITO) films have been widely used in the industrial production [5][6][7]. However, they have some limitations such as poor raw materials, high cost, toxicity and instability to H 2 plasma, which limit their practical applications [2,5,[8][9][10]. Therefore, alternative materials are essentially needed to change this awkward situation.…”
Section: Introductionmentioning
confidence: 99%
“…Compared with ZnO, ZnO:Al has a higher electrical conductivity because of the concentration of the carries is increased by doped Al [9]. In order to further improve the properties of the films [8][9][10], researchers have paid a lot of attention on the preparation methods and the experimental parameters optimization. However, some mechanical properties, such as hardness and adhesion have rarely been reported, although they are very important in industrial applications.…”
Section: Introductionmentioning
confidence: 99%
“…However ITO thin films have disadvantages, including toxicity, high price, and instability in hydrogen plasma. Accordingly, Al-doped zinc oxide (AZO) thin films have attracted much attention to replace ITO because they have good resistivity, high transmittance, non-toxicity, and low cost [7]. It is well known that surface roughnesses of transparent conductive thin films have a significant influence on device performance [8].…”
Section: Introductionmentioning
confidence: 99%