Preparation of a silicon surface for subsequent growth of dilute nitride alloys by molecular-beam epitaxy

Abstract

Abstract. This article discusses the process of preparation of a silicon surface for subsequent growth of dilute nitride alloys by molecular-beam epitaxy. The method of preparation of Si (100) and Si (111) substrates was developed. This method provides reproducible high-quality silicon surface for molecular-beam epitaxy of Si-GaP heterostructures. As a result, it managed to reduce the eviction oxide temperature below 800 °C, which is an important parameter for the MBE technology.

Creation of effective sources of white radiation based on GaP(As,N) on silicon substrates

“…Preliminary cleaning of silicon substrates is one of the most important stages in the MBE technology for the formation of silicon heterostructures. Before epitaxial growth, Si substrates underwent a cycle of chemical treatment according to method [10].…”

Development of in situ characterization techniques in molecular beam epitaxy

“…Although the in situ characterization techniques reviewed above have provided researchers numerous powerful tools for material studies, there are several limitations for many of these techniques. For example, AFM and SEM require the transfer of samples to other chambers for in situ monitoring, which interrupt the growth process during characterization [29,30,33] . In addition, characterization techniques such as scanning probe microscopy and surface plasmon resonance spectroscopy, necessitate close proximity or direct contact with the film surface, which can result in surface damage, such as scratches, and interruption of other in situ characterization and the growth process [200] .…”

“…In situ characterization allows for accurate material characterization in their original environment, tracking dynamic material changes in structure, morphology, and reaction kinetics, and providing rapid characterization results, typically in real time [25] . By enabling in situ monitoring of the material and subsequent characterization without exposing the sample to air, in situ techniques can eliminate unwanted stoichiometry impacts, ensuring that films are not subjected to active contaminants present during ex situ characterization [33,34] . Although most contaminants can be removed by moderate heating, ex situ characterization equipment often lacks such heating capabilities.…”