Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide

Gablech, Imrich; Svatoš, Vojtěch; Caha, Ondřej; Hrabovský, Miloš; Prášek, Jan; Hubálek, Jaromír; Šikola, Tomáš

doi:10.1007/s10853-015-9648-y

Cited by 18 publications

(3 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The deposition of PZT thin films can be achieved by both physical and chemical coating techniques [52]. The physical approaches include ion beam sputtering [53], radiofrequency planer magnetron sputtering [54], and DC magnetron sputtering [55]. Chemical techniques such as metal-organic chemical vapor deposition (MOCVD) [56], chemical solution deposition [57], and metal-organic decomposition [58] have also been applied for depositing PZT thin films.…”

Section: Lead-based Piezoelectric Thin Filmsmentioning

confidence: 99%

Piezoelectric Micromachined Ultrasound Transducer Technology: Recent Advances and Applications

Wan

Jiang

et al. 2022

Biosensors

View full text Add to dashboard Cite

The objective of this article is to review the recent advancement in piezoelectric micromachined ultrasound transducer (PMUT) technology and the associated piezoelectric materials, device fabrication and characterization, as well as applications. PMUT has been an active research topic since the late 1990s because of the ultrasound application needs of low cost large 2D arrays, and the promising progresses on piezoelectric thin films, semiconductors, and micro/nano-electromechanical system technology. However, the industrial and medical applications of PMUTs have not been very significant until the recent success of PMUT based fingerprint sensing, which inspired growing interests in PMUT research and development. In this paper, recent advances of piezoelectric materials for PMUTs are reviewed first by analyzing the material properties and their suitability for PMUTs. PMUT structures and the associated micromachining processes are next reviewed with a focus on the complementary metal oxide semiconductor compatibility. PMUT prototypes and their applications over the last decade are then summarized to show the development trend of PMUTs. Finally, the prospective future of PMUTs is discussed as well as the challenges on piezoelectric materials, micro/nanofabrication and device integration.

show abstract

Section: Lead-based Piezoelectric Thin Filmsmentioning

confidence: 99%

Piezoelectric Micromachined Ultrasound Transducer Technology: Recent Advances and Applications

Wan

Jiang

et al. 2022

Biosensors

View full text Add to dashboard Cite

show abstract

“…The wafers were loaded into the IBAD instrument and the system was evacuated to a base pressure of ≈9 × 10 −7 Pa. Wafers were then pre-cleaned using a secondary ion-beam source with Ar plasma with 30 V beam voltage (BV), for a duration of 300 s. We then deposited ≈80 nm of Ti, serving as a seed layer for consequent AlN (001) deposition, as well as an electrical connection between the AlN and Si substrate. We activated the primary Kaufman ion-beam source, using a BV of 200 V, resulting in a (001) oriented layer of Ti [18,19]. This was followed with a change in the BV to 400 V and the addition of N 2 to the primary ion-beam source, with a ratio of 1:1 to Ar.…”

Section: Chip Design and Fabricationmentioning

confidence: 99%

Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

et al. 2020

Self Cite

View full text Add to dashboard Cite

In this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition. The preferentially (001) orientated AlN thin films possess exceptionally high piezoelectric coefficients d33 of (7.33 ± 0.08) pC∙N−1. The fabrication of PEH was completed using just three lithography steps, conventional silicon substrate with full control of the cantilever thickness, in addition to the thickness of the proof mass. As the AlN deposition was conducted at a temperature of ≈330 °C, the process can be implemented into standard complementary metal oxide semiconductor (CMOS) technology, as well as the CMOS wafer post-processing. The PEH cantilever deflection and efficiency were characterized using both laser interferometry, and a vibration shaker, respectively. This technology could become a core feature for future CMOS-based energy harvesters.

show abstract

“…Both layers were sputtered by ion-beam deposition system (Bestec) equipped with RFICP Kaufman ion-beam source (Kaufman & Robinson -KRI ). The deposition parameters (thickness and rate of deposition) were monitored by Inficon SQM-242 card with a quartz crystal sensor as reported previously [11]. The lithography process was carried out using UV direct write laser system (Heidelberg Instruments, DWL 66-fs), and the process conditions of development steps were set according to the specifications provided by the producer of the photoresist (Allresist, AR-N 4340).…”

Section: Microelectrode Systemmentioning

confidence: 99%

Microelectrode array systems for their use in single nanowire-based gas sensor platforms

Chmela

Sadílek

Vallejos

et al. 2017

Journal of Electrical Engineering

Self Cite

View full text Add to dashboard Cite

Microelectrode array systems for their use in single-nanowire-based gas sensor platforms are developed. The topology of the system is designed with the aim of determining the optimal conditions and the factors involved in the selective integration of gas sensitive semiconducting metal oxide nanowires via dielectrophoresis method. Thus various electrode geometries with electrode gaps between 2 and 10 µ m and electrode tip-end shapes are investigated employing tungsten oxide nanowires synthetized via aerosol-assisted chemical vapor deposition. Results obtained from SEM, optical microscopy and electrical tests demonstrate that the integration and electrical contact of single nanowires across the electrodes is achieved in the systems with electrode gaps below 3 µ m. These results are discussed and further improvements in the design of these systems are suggested.

show abstract

Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide

Cited by 18 publications

References 20 publications

Piezoelectric Micromachined Ultrasound Transducer Technology: Recent Advances and Applications

Piezoelectric Micromachined Ultrasound Transducer Technology: Recent Advances and Applications

Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

Microelectrode array systems for their use in single nanowire-based gas sensor platforms

Contact Info

Product

Resources

About