2021
DOI: 10.1016/j.optlastec.2020.106905
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Preparation, modification and nonlinear optical properties of semiconducting MoS2 and MoS2/ZnO composite film

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Cited by 19 publications
(7 citation statements)
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“…In the case of MoS 2 , the excited electron transitioned from VB to CB by several interband and intraband transitions (Figure b), such as VB (S 00 ) state to CB (S 01 ) state by one-photon absorption (1PA), VB (S 00 ) state to CB (S 02 ) state by TPA, and CB (S 02 ) state to CB (S 03 ) state by 1PA . The excited carriers transfer from CB (S 03 ) states in MoS 2 to the bottom of the CB of ZnO during the interfacial charge-transfer process . These phenomena cause SA in the heterostructure.…”
Section: Results and Discussionmentioning
confidence: 99%
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“…In the case of MoS 2 , the excited electron transitioned from VB to CB by several interband and intraband transitions (Figure b), such as VB (S 00 ) state to CB (S 01 ) state by one-photon absorption (1PA), VB (S 00 ) state to CB (S 02 ) state by TPA, and CB (S 02 ) state to CB (S 03 ) state by 1PA . The excited carriers transfer from CB (S 03 ) states in MoS 2 to the bottom of the CB of ZnO during the interfacial charge-transfer process . These phenomena cause SA in the heterostructure.…”
Section: Results and Discussionmentioning
confidence: 99%
“…10 The excited carriers transfer from CB (S 03 ) states in MoS 2 to the bottom of the CB of ZnO during the interfacial charge-transfer process. 46 These phenomena cause SA in the heterostructure. Further, the input pulse energy was raised to 35 μJ.…”
Section: Nonlinear Optical Studies and Mechanismmentioning
confidence: 99%
“…The growth mode of MoS 2 with I-type (c ∥ ) and II-type (c ⊥ ) on MoTe 2 corresponds to the c -axis parallel and perpendicular to the substrate plane, respectively. In refs and , the growth mode of MoS 2 by the magnetron sputtering method has been reported and is summarized in Figure S2. With the change of sputtering temperature and time, the final growth mode of MoS 2 is I-type stacked II-type.…”
Section: Resultsmentioning
confidence: 99%
“…As a result, they can provide a solid interface with the incident photon and have advantageous properties like broadband absorption, transparency, and high carrier mobility. The interest in 2D TMDs, particularly MoS 2 monolayers, resulted in a variety of applications [ 6 , 7 , 8 , 9 , 10 , 11 ]. The bandgap of TMDs depends on the number of layers and the type of dopants.…”
Section: Introductionmentioning
confidence: 99%