Preparation and thermoelectric properties of BaMn2−xZnxSb2 zintl compounds

Wang, H. F.; Cai, Kefeng; Chen, Shi

doi:10.1007/s10854-012-0820-8

Cited by 9 publications

(6 citation statements)

References 20 publications

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“…By means of alloying or substitution at sites A, M and Sb, tuning of the thermal and electronic properties has been accomplished. [278][279][280][281][282][283][284][285][286][287][288][289][290][291] Structural disorder resulting from the incorporation of multiple ions can significantly increase the zT, primarily due to a reduction of the lattice thermal conductivity κ L . In particular, this is the case of YbZn 0.4 Cd 1.6 Sb 2 (zT = 1.26 at 700 K), 283 EuZn 1.8 Cd 0.2 Sb 2 (zT = 1.06 at 650 K) 286 and YbCd 1.85 Mn 0.15 Sb 2 (zT = 1.14 at 650 K) (Fig.…”

Section: Zintl Phasesmentioning

confidence: 99%

Recent advances in high-performance bulk thermoelectric materials

Shi

Chen

Uher

2016

International Materials Reviews

423

241

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Thermoelectric (TE) materials facilitate direct heat-to-electricity conversion. The performance of a TE material is characterised by its figure of merit zT (=S 2 σT/κ) that depends on both electronic transport properties, i.e. the Seebeck coefficient S and the electrical conductivity σ, and on thermal transport properties, i.e. the thermal conductivity κ of a material. The intrinsically countercorrelated behaviour between electronic and thermal transport properties makes the enhancement of zT a very challenging task. In the past 10 years, the zTs in bulk TE materials have been significantly enhanced due to intensive exploratory efforts, the discovery of new physical phenomena and effects, and applications of advanced synthesis methods. In this review, we summarise the recent progress in bulk TE materials. After the introduction of fundamental principles of thermoelectricity, the recently achieved enhancements in the TE performance encompassing the use of electronic band structure engineering, lattice phonon engineering and nanostructure tailoring will be emphasised. Next, the highlights of typical TE materials will be presented, focusing especially on the great progress achieved during the past decade. Finally, new techniques and approaches developed to fabricate TE materials will be outlined and their impact on the performance and economic viability of large-scale TE applications will be considered. The progress made during the past dozen or so years provides great opportunities for the use of bulk TE materials in a much broader range of applications and bodes well for a more efficient utilisation of energy.

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Section: Zintl Phasesmentioning

confidence: 99%

Recent advances in high-performance bulk thermoelectric materials

Shi

Chen

Uher

2016

International Materials Reviews

423

241

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“…18,19,21,22 Both were predicted to exhibit large Seebeck coefficient. 19,21 Therefore, it is of interest to explore thermoelectric properties of isostructural and semiconducting BaMn 2 Bi 2 .…”

Section: -12mentioning

confidence: 99%

Large thermopower in the antiferromagnetic semiconductor BaMn2Bi2

Petrović¹

2013

Applied Physics Letters

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We report electrical and thermal transport properties of Mn-based material BaMn 2 Bi 2 with ThCr 2 Si 2 structure. The resistivity of the antiferromagnetic BaMn 2 Bi 2 shows a metal-semiconductor transition at ∼ 80 K with decreasing temperature. Correspondingly, the thermopower S shows a peak at the same temperature, approaching 150 µV/K. With increasing temperature S decreases to about 125 µV/K at the room temperature. The magnetic field enhances the peak value to 210 µV/K. The Hall resistivity reveals an abrupt change of the carrier density close to the metal-semiconductor transition temperature.Thermoelectric materials with high Seebeck coefficient S (thermopower) have been attracting significant attention because of potential applications, particularly in waste heat recovery.1-4 High figure of merit (ZT=σS 2 T /κ, where σ and κ are the electrical and thermal conductivity, respectively) usually requires high thermopower. This raises considerable interest in exploratory synthesis of strongly correlated electron materials. Thermopower represents an electrical current entropy flow and therefore the charge/spin/orbital degrees of freedom might be manipulated for its enhancement, particularly around metal-insulator transitions. 5-8For example, giant thermopower and a record high thermoelectric power factor up towas observed in FeSb 2 with narrow energy gaps and correlated bands. 9-12Since the discovery of high temperature superconductivity in layered iron pnictide and iron chalcogenide compounds, the large diversity of the layered transitional metal pnictide compounds have been explored.13,14 In particular, doped AM 2 P n 2 (A=Ca, Sr, Ba or Eu, M =Fe, Mn, Rh or Co, and P n is pnictide or chalcogenide element) with ThCr 2 Si 2 (122-type) structure have been thoroughly investigated. Besides Fe-based high temperature superconductivity, high thermopower with metallic conduction was observed.15-17 Mn-based AM 2 P n 2 materials usually exhibit magnetic ground states with strong correlations.18-20 BaMn 2 As 2 and BaMn 2 Sb 2 are antiferromagnetic semiconductors due to the strong Hund's coupling and the stability of the half-filled d-shell of the Mn +2 ions. 18,19,21,22 Both were predicted to exhibit large Seebeck coefficient.19,21 Therefore, it is of interest to explore thermoelectric properties of isostructural and semiconducting BaMn 2 Bi 2 . 23Here we report electrical and thermal transport properties of Mn-based material BaMn 2 Bi 2 with ThCr 2 Si 2 structure.The resistivity of the antiferromagnetic BaMn 2 Bi 2 shows a metal-semiconductor transition at ∼ 80 K with decreasing temperature. Correspondingly, the thermopower S shows a peak at the same temperature and the value approaches 150 µV/K. With increasing temperature S decreases, but is still about 120 µV/K at the room temperature. The magnetic field enhances the peak value to 210 µV/K. The Hall resistivity reveals an abrupt change of the carrier density close to the metalsemiconductor transition temperature.Single crystals of BaMn 2 Bi 2 were grown using a high-t...

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“…For example, in BP-based semiconductor eld effect transistors, even subtle degradation of BP can greatly reduce the electrical conductivity. [8][9][10] Furthermore, the high toxicity closely associated with the instability of BP is also a major hurdle for its biomedical applications. [11][12][13] Understanding the degradation mechanism of BP is important for the fabrication of BP-based materials/devices and their safe applications.…”

Section: Introductionmentioning

confidence: 99%