Preparation and thermoelectric power properties of highly doped p-type Sb2Te3 thin films

Adam, A.M.; Elsehly, Emad M.; Ataalla, M.; El-Khouly, A.; Nafady, Ayman; Diab, A.K.

doi:10.1016/j.physe.2020.114505

Cited by 28 publications

(5 citation statements)

References 32 publications

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“…XRD results for the FVA-CNT samples did not indicate any impurity phases. The positions of the main peaks correspond to the cubic structure with the lattice parameter a = 3.49093A˚ for FVA and a = 3.48816 A˚ for FVA-CNT, respectively, Table (1), which is strongly consistent with the evidence from the literature [19]. The narrow and sharp peaks in the x-ray patterns reveal the high crystallization of the samples under investigation.…”

Section: Samples Characterizationsupporting

confidence: 86%

“…Thermoelectric technology, which is based on the Peltier and Seebeck phenomena, enables the direct conversion of heat into electricity, providing a sustainable energy conversion option [1]. The most important aspect determining this technology's ability to convert energy efficiently is its dimensionless figure of merit ZT for thermoelectric materials.…”

Section: Introductionmentioning

confidence: 99%

“…The most important aspect determining this technology's ability to convert energy efficiently is its dimensionless figure of merit ZT for thermoelectric materials. ZT is commonly expressed using the following relation: (1) Where the parameters of this equation were defined in [2]. Over the past few decades, numerous efforts have been undertaken to improve the thermoelectric capability of different materials using several techniques, such as doping engineering [3].…”

Section: Introductionmentioning

confidence: 99%

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Thermoelectric performance of Fe2ALV/CNT-based alloys

et al. 2023

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Heusler-type Fe2VxTi 1-xAl alloys offer an alternative solution for the generation of thermoelectric power near room temperature. In the current research, thermoelectric properties of the p-type Fe2V0.9Ti0.1Al and Fe2V0.9Ti0.1Al/CNTs alloys, prepared by SPS, were studied. Carbon nanotubes (CNTs) were used as dopants to improve the Seebeck coefficient and electrical conductivity. Upon doping with CNTs, the thermal conductivity was significantly reduced, meanwhile, the value of the power factor increased from 0.45 to 1.55 mW/mK2 at around 330K. The effect of CNT inclusions on the thermoelectric parameters of Fe2VxTi 1-xAl compounds was systematically studied. When compared to Fe2V0.9Ti0.1Al, which had a figure of merit of just 0.02 at 330 K, the CNT-containing samples showed a significantly improved figure of merit up to 0.07. we offer a novel technique to improve the performance of Fe2VAl alloys.

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Section: Samples Characterizationsupporting

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Thermoelectric performance of Fe2ALV/CNT-based alloys

et al. 2023

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“…Thermal evaporation technique is the most suitable for physically stacked layers because it gives several advantages such as high stability, high reproducibility, high deposition rate, large area deposition, uniform and compact films which are very important properties for thin films 16 . Earlier surface morphology analysis on thin films has shown that the vacuum thermal evaporation technique is one of the most appropriate techniques for the production of nanocrystals based films 17 . The 500 nm thick CdO films were grown onto glass and Yb substrates at room temperature under vacuum pressure of 10 -5 mbar during the evaporation cycle.…”

Section: Methodsmentioning

confidence: 99%

Effects of Si Slabs on the Performance of CdO Thin Films Designed for Optoelectronic Applications

Algarni

Qasrawi

2022

Mat. Res.

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Herein, the structural, morphological, optical and electrical properties of CdO stacked layers comprising Si slabs of thickness of 100 nm are investigated. The performance of the stacked layers, which are prepared by the thermal evaporation technique under vacuum pressure of 10 -5 mbar, is remarkably enhanced via insertion of Si thin slabs. The presence of Si slabs between the layers of CdO improves the crystallinity and surface morphology, increases the light absorbability in the ultraviolet and visible ranges of light and also increases the dielectric constant, the quality factor, and optical conductivity values. The optical conductivity parameters, which are analyzed in accordance with Drude-Lorentz approach, have shown that the insertion of the Si layers rises the values of the drift mobility of holes in CdO and lowers the free holes concentration. The energy band gap of CdO films is narrowed from 2.20 to 1.27 eV upon insertion of Si slabs. The applicability of the plasmonic CdO/Si/CdO devices as low pass filers in the frequency domain of 0.01-1.80 GHz is verified through impedance spectroscopy measurements.

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“…Thermoelectric materials are essential for achieving global sustainability goals [1][2][3][4] due to their ability to transform electrical energy into thermal energy and vice versa. Additionally, the use of thermoelectric materials for this purpose is a green energy harvesting technique since it uses waste heat from various sources, such as power plants and vehicles, to generate electricity [5,6].…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Properties of Hf_2−xTi_xFeNiSb₂ double-half Heusler alloys

et al. 2023

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This work presents experimental investigation of the thermoelectric and structural characteristics of new double half Heusler alloys Hf2-xTixFeNiSb2 (x= 0, 0.15, 0.25 and 0.4). The studied samples were synthesized using different techniques of melt spinning, arc melting and spark plasma sintering. Crystal structure of the studied compounds was examined via x-ray diffraction (XRD). A face centered cubic structure was found to be the dominant crystallization phase. Homogeneity and relatively high density were obtained in the fabricated samples. Thermoelectric properties of the samples were studied over a temperature range from 300 to 800 K. Thermal conductivity was found to be significantly decreased with the Titanium (Ti) doping due to enhanced the phonon scattering. The highest value of the thermoelectric figure of merit was obtained for Hf1.75Ti0.25FeNiSb2 to be 0.28±0.014 at 800 K.

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Preparation and thermoelectric power properties of highly doped p-type Sb2Te3 thin films

Cited by 28 publications

References 32 publications

Thermoelectric performance of Fe2ALV/CNT-based alloys

Thermoelectric performance of Fe2ALV/CNT-based alloys

Effects of Si Slabs on the Performance of CdO Thin Films Designed for Optoelectronic Applications

Thermoelectric Properties of Hf_2−xTi_xFeNiSb₂ double-half Heusler alloys

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Preparation and thermoelectric power properties of highly doped p-type Sb2Te3 thin films

Cited by 28 publications

References 32 publications

Thermoelectric performance of Fe2ALV/CNT-based alloys

Thermoelectric performance of Fe2ALV/CNT-based alloys

Effects of Si Slabs on the Performance of CdO Thin Films Designed for Optoelectronic Applications

Thermoelectric Properties of Hf2−xTixFeNiSb2 double-half Heusler alloys

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Product

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Thermoelectric Properties of Hf_2−xTi_xFeNiSb₂ double-half Heusler alloys