“…Gate dielectrics have been a continuous research interest due to their broad applications in nano- and microelectronics [1–3], such as metal oxide films for complementary metal oxide semiconductors (CMOS) [4] and dynamic random access memory (DRAM) [5]. However, the use of the traditional SiO 2 comes to its limit due to the scaling of devices, hence it is urgent to develop next generation of gate dielectrics to replace SiO 2 in semiconductor industry [6, 7]. Recently, alternative metal oxides have been extensively investigated, such as ZrO 2 , Ta 2 O 5 , HfO 2 , Nb 2 O 5, and TiO 2 .…”