Preparation and properties of germyl methyl ether and germylmethyl methyl ether

Abstract

GERMYL METHYL ETHER AND GERMYLMETHYL METHYL ETHER 1989 metal-ammonia solutions, we propose the mechanism 21 --23 e . 4-GeHI -3 GeH8 -t. H 2BIn this mechanism,5 one would expect the rate of formation of amide ion (which catalyzes the Ge(NH)z-producing reaction), relative to the rate of reaction 4, to increase with increasing metal concentration. The mechanism thus explains the excess hydrogen formed at high metal concentrations. The same mechanism is applicable to the analogous reactions of silane and stannane if we assume that, on going from SiH4 to GeH4 to SnH4, the protonic acidity increases and the susceptibility to displacement of hydride ion by amide ion decreases.Acknowledgments.-This work was sponsored by the U. S. Atomic Energy Commission and the National Science Foundation.(24) The rate-determining step in the formation of Ge(NHda is probably reaction 8, because the germanium would become more positive as the number of amino groups increases (inductive effect) and, consequently, more susceptible to nucleophilic attack by amide.26 From the data in Table 11, we calculate ks/ks = 0.18. (25) F. Rijkens and G. J. M. Van Der Kerk, "Investigations in the Field ofThe synthesis, characterization, and some properties of GeH30CH3 and GeH3CH20CH8 are described. The donor properties of the compounds have been investigated by an infrared hydrogen-bonding study. Germyl methyl ether acts as a stronger Lewis base than (C&)zo, and GeHaCHzOCHa acts as a weaker Lewis base than CH3CHzOCH3, with methanol as reference acid. The results are compared with data for the corresponding silicon compounds and discussed in terms of electronegativity and rr-bonding considerations.

A Glimpse at the Chemistry of GeH2in Solution. Direct Detection of an Intramolecular Germylene–Alkene π-Complex

“…In both cases, several of the multiplets collapsed to lower multiplicities, and some disappeared altogether, in the spectra of the corresponding 4 - d 2 /ROH photolysis mixtures (e.g., Figure S4, Supporting Information). GC/MS analysis suggested that these were due to at least three C 11 H 14 Ge-containing products in both cases; the apparent complexity of the mixtures and the expected delicacy of the compounds , suggested that isolating them would be quite difficult, so we did not try. Nevertheless, it can be concluded from the deuterium-labeling results that these compounds are formed mainly by hydrogermylation processes, most likely involving the CC bonds in diene 6 ; they are all primary reaction products, as they are already present in the mixtures after ca.…”

Mixed silyl germyl Group VIA derivatives

“…For example, the main thermal decomposition products of CH3OGeH3 at 0°are CH3OH, GeEU, uncharacterized solids, and possibly (GeH3)20. 32 The compound CH3SGeH3 is reasonably stable thermally; a sample was held for 7 days at room temperature with no apparent decomposition.17…”

Two-dimensional CSiO and CGeO: direct-band-gap semiconductors with normal/anomalous auxeticity for solar cells and alkali-metal-ion batteries

“…Recently, some 2D materials have been designed and synthesized by extending molecules into solids [13][14][15]. In this work, by means of density functional theory (DFT) calculations, we first verify the stability of XH 3 OCH 3 (X = Si or Ge) molecules which have been synthesized in 1970s [16,17]. Based on the structural characteristics of XH 3 OCH 3 molecules, 2D α-CXO (X = Si or Ge) nanosheets are designed by the assembly of these molecules.…”