Preparation and properties of Bi4Ti3O12 single-crystal thin films by atmospheric pressure metalorganic chemical vapor deposition

Abstract

Bismuth titanate (Bi4Ti3O12) thin films have been grown on (100) silicon substrates at 550 °C by atmospheric pressure metalorganic chemical vapor deposition using Bi (C6H5)3 and Ti (OC4H9)4 as the source materials. The x-ray diffraction analysis and reflection electron diffraction pattern revealed that the film is a single crystal with a (100) orientation. Ferroelectric properties were confirmed by polarization hysteresis curve observation. The remanent polarization and coercive field were found to be 38 μC/cm2 and 45 kV/cm, respectively. The measured dielectric constant and loss tangent were 93 and 0.05, respectively, at room temperature.

Sol–gel synthesis, structure characterization and Raman spectroscopy of Gd2−2xBi2xTi2O7 solid solutions

“…This material presents a visible light absorption in the region 420-500 nm [13]. Preparation of Bi 2 Ti 2 O 7 was completed by various synthetic processes like: conventional solid-state approach [14], metalorganic chemical vapor deposition [15], co-precipitation route [16], etc. This oxide is not a stable phase in the Bi 2 O 3 /TiO 2 phase diagram, so it is difficult to form pure bismuth titanate composition Bi 2 Ti 2 O 7 [3].…”

Crystallization of bismuth titanate and bismuth silicate grown as thin films by atomic layer deposition

“…Ternary bismuth compounds form a variety of phases such as Bi 2 SiO 5 , Bi 4 TiO 20 . These phases have been deposited by both chemical and physical methods [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. For example, Bi 2 SiO 5 has attracted interest as buffer layer for metalferroelectric-insulator-semiconductor (MIS) structures [1,22].…”

“…Atmospheres used in annealing of Bi-Ti-O phases have been oxygen or air [1,3]. Another possibility is to use high enough deposition temperatures as done in MOCVD to obtain the as-deposited thin films crystalline [4,7,14,15,22,29].…”

Ferroelectric and Dielectric Properties of Lanthanum-Modified Bismuth Titanate Thin Films Obtained by the Polymeric Precursor Method

“…The film had a relatively low coercive field (13 kV/cm), but the remanent polarization was very low (0.6 µC/cm 2 ). Wang [6] developed an atmospheric pressure MOCVD technique to prepare BTO thin films. These films exhibited high (100) orientation with high remanent polarization (38 µC/cm 2 ) and high coercive field (45 kV/cm).…”