Preparation and photosensitivity investigation of n-GaSe/p-CuIn3Se5 heterostructures

Bodnar, I. V.; Victorov, I.A.; Kushner, T. L.; Rud, V. Yu.; Rud, Yu. V.

doi:10.1016/j.tsf.2005.01.064

Cited by 11 publications

(6 citation statements)

References 10 publications

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“…1) index in a tetragonal unit cell in agreement with the literature [11,12]. The lattice constants a ¼ 0.5740 nm and c ¼ 1.1501 nm, refined by the least square method agree with those reported previously [13,14]. The crystallite size D (32 nm) was evaluated from the full width at half maximum (b) of the most intense XRD peak (110) close to the stoichiometric formulation CuIn 3 Se 5 with however a slight indium excess giving the material n-type behavior.…”

Section: Resultssupporting

confidence: 89%

Physical, photoelectrochemical properties of CuIn3Se5 and relevance for hydrogen production

Djellal

Bellal

Trari

2012

Materials Chemistry and Physics

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Section: Resultssupporting

confidence: 89%

Physical, photoelectrochemical properties of CuIn3Se5 and relevance for hydrogen production

Djellal

Bellal

Trari

2012

Materials Chemistry and Physics

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“…The appearance of this peak specific to the structure OVC is attributed to the difference in atomic arrangement of the cation sub-lattice in the structure. The preferred [1 1 0] orientation is different from that reported by others [1 1 2] [8]. The lattice constants a = 0.5740 nm and c = 1.1501 nm, refined by the least square method (c/a = 2.003), are in good agreement with those given previously (a = 0.5766 nm, c = 1.1499 nm) [8,13].…”

Section: Structural Propertiessupporting

confidence: 80%

“…The preferred [1 1 0] orientation is different from that reported by others [1 1 2] [8]. The lattice constants a = 0.5740 nm and c = 1.1501 nm, refined by the least square method (c/a = 2.003), are in good agreement with those given previously (a = 0.5766 nm, c = 1.1499 nm) [8,13].…”

Section: Structural Propertiessupporting

confidence: 80%

“…Several workers showed that the presence of OVC on the absorber layer is advantageous for high performance photovoltaic devices [4]. However, fewer papers dealing with the physical properties of CuIn 3 Se 5 have been reported [8]. Further investigations with dense material provide useful insights into the basic properties and the energy band diagram, thereby improving the photovoltaic efficiencies and predicting the H 2 evolution (chemical energy) in liquid junctions [9].…”

Section: Introductionmentioning

confidence: 99%

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Structural, optical and photoelectrochemical properties of CuIn₃Se₅

Djellal¹,

Bouguelia²,

Trari³

2008

Semicond. Sci. Technol.

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The morphology, optical characterization and transport properties of dense material CuIn 3 Se 5 have been reported. CuIn 3 Se 5 was synthesized by the fusion technique in a sealed quartz ampoule. The ingots were polycrystalline and the phase crystallizes in a P-chalcopyrite structure. The XRD pattern confirms the formation of the ordered vacancy compound. The composition (Cu = 13.3 at%, In = 31.5 at%, Se = 55.2 at%), established by energy dispersive spectroscopy, is close to the stoichiometric formulation. A band gap of 1.19 eV has been obtained from the diffuse reflectance spectrum. CuIn 3 Se 5 exhibits semi-conducting behavior with an activation energy of 0.52 eV. The thermal variation of the thermopower indicates that the charge carriers are electrons and the conduction occurs predominantly by small polaron hopping. The dissolution rate, determined through dissolved copper, was found to be 1.2 µmol m −2 /year in the KCl electrolyte. The results give deeper insights into the photoelectrochemical properties investigated for the first time on the dense material. The capacitance measurement indicates linear behavior from which a flat band potential V fb of −0.22 V SCE and a doping density N D of 3.75 × 10 16 cm −3 were determined. The energy band diagram shows the potentiality for solar energy conversion. The complex impedance pattern is circular in the low frequency region and tends to a straight line in the high frequency one, attributed to the ionic diffusion.

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“…Therefore these compounds are known as compounds with ordered vacancies. The structural, optical, and thermophysical properties of CuIn 3 Se 5 single crystals were studied earlier in [4][5][6][7][8], and photosensitive heterostructures based on them were also made. It was shown that these heterostructures can be used as broadband photoconverters for solar radiation.…”

mentioning

confidence: 99%

Optical properties of films of the ternary compound CuIn3Se5

Bodnar

Гременок

2007

J Appl Spectrosc

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We have used the laser vaporization method to obtain films of the ternary compound CuIn 3 Se 5 and have studied the composition and structure of the films obtained. We have determined the energy and nature of the optical transitions for the indicated compound from the transmission spectra in the region of the intrinsic absorption edge. We have calculated the valence-band crystal-field (∆ CF ) and spin-orbit (∆ SO ) splitting energies according to Hopfield's quasicubic model for the ternary compound CuIn 3 Se 5 .

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Preparation and photosensitivity investigation of n-GaSe/p-CuIn3Se5 heterostructures

Cited by 11 publications

References 10 publications

Physical, photoelectrochemical properties of CuIn3Se5 and relevance for hydrogen production

Physical, photoelectrochemical properties of CuIn3Se5 and relevance for hydrogen production

Structural, optical and photoelectrochemical properties of CuIn₃Se₅

Optical properties of films of the ternary compound CuIn3Se5

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Preparation and photosensitivity investigation of n-GaSe/p-CuIn3Se5 heterostructures

Cited by 11 publications

References 10 publications

Physical, photoelectrochemical properties of CuIn3Se5 and relevance for hydrogen production

Physical, photoelectrochemical properties of CuIn3Se5 and relevance for hydrogen production

Structural, optical and photoelectrochemical properties of CuIn3Se5

Optical properties of films of the ternary compound CuIn3Se5

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Product

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Structural, optical and photoelectrochemical properties of CuIn₃Se₅