Preparation and photoluminescence of surface N-doped ZnO nanocrystal

Zinc magnesium oxide nanofibers on glass substrate by solution growth technique

“…There are indications of transitions related to mid-gap states with very low intensity when excited by 258 nm radiation. The peak at 3.13 eV may be ascribed to a shallow acceptor bound exciton as had been reported by Wei et al [27] and Zeng et al [28]. Hsu et al [15] also reported a NBE peak arising due to free-exciton emission at $3.27 eV.…”

The morphology and optical properties of Cr-doped ZnO films grown using the magnetron co-sputtering method

“…It is currently accepted that visible emissions in ZnO stem from different intrinsic defects, such as oxygen vacancies (V O ), zinc vacancies (V Zn ), zinc interstitials (Zn i ), oxygen interstitials (O i ) and antisite defect (O Zn ). Recently, an unusual NV emission located around 400 nm has been observed in ZnO films [34][35][36], nanoparticles [37,38], nano/microfibers [39], whiskers [40] and nanorods [41]. However, the exact origin of the NV emission is not well understood and is still debatable.…”

The effect of NH3 concentrations on the electrical properties of N-doped ZnO and study on mechanism

“…The N 1s peak presents the formation of N-Zn bonds, which shows nitrogen atom slipped into oxygen vacancy as part of oxygen substitute of ZnO [13][14][15]. The process of doping could be explained as follow [16]:…”