Preparation and performance of semiconductor device bonding joints based on Cu@Sn@Ag preform

Zhang, Honghui; Xu, Hongyan; Wang, Tianwen; Wang, Sheng

doi:10.1039/d3ra06909e

RSC Adv.

2023

DOI: 10.1039/d3ra06909e

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Preparation and performance of semiconductor device bonding joints based on Cu@Sn@Ag preform

Honghui Zhang,

Hongyan Xu,

Tianwen Wang

et al.

Abstract: Herein, a 110 A commercial, Si continuous current diode with high heat dissipation power is attached to Cu@Sn@Ag preform, formed by electroplating and physical vapor deposition, and pressed into a preformed sheet under a pressure of 5–10 MPa.

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Preparation and performance of semiconductor device bonding joints based on Cu@Sn@Ag preform

Abstract: Herein, a 110 A commercial, Si continuous current diode with high heat dissipation power is attached to Cu@Sn@Ag preform, formed by electroplating and physical vapor deposition, and pressed into a preformed sheet under a pressure of 5–10 MPa.

Cited by 0 publications

References 21 publications

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