Preparation and performance of AlSc alloy targets

Ding, Zhaochong; Cao, Xiaomeng; Jia, Qiang; Zhang, Xiaona

doi:10.1063/5.0079119

Cited by 4 publications

(2 citation statements)

References 2 publications

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“…AlSc was found to be a peculiar metallic material that simultaneously satisfies the contradictory properties of being chemically stable and having a low work function. Note that the amount of oxygen inside AlSc depends on the compositional ratio of AlSc [22]. The amount oxygen inside AlSc increases with increasing Sc content and vice versa.…”

Section: A Properties Of Alsc and Wo X For S/d Contactsmentioning

confidence: 97%

Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact

Kawanago

Kajikawa

Mizutani

et al. 2023

IEEE J. Electron Devices Soc.

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In this study, we experimentally demonstrated concepts for realizing doping-free Tungsten Diselenide (WSe2) complementary metal-oxide-semiconductor (CMOS) inverter by developing alloys and compound metals used as source/drain (S/D) contacts. Aluminum -scandium alloy (AlSc) and tungsten oxide (WOx)-based S/D contacts enable efficient electron and hole injection into WSe2 for n-type and p-type FET operation because the work function (WF) of AlSc and WOx are aligned to neighboring the conduction and valence band edge of WSe2, respectively. A dual-gate bias architecture is used to improve electrical characteristics of FETs and enhance CMOS inverter performance after device fabrication. By utilizing AlSc and WOxbased S/D contacts in conjunction with the dual-gate bias architecture, our fabricated WSe2 CMOS inverter realized a higher gain at Vdd of 1 V or higher than those in the literatures. Furthermore, the fabricated WSe2 CMOS inverter is operated at a power supply voltage (Vdd) of as low as 0.5 V. This study paves the way towards research and development of transition metal dichalcogenides-based devices and circuits.

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Section: A Properties Of Alsc and Wo X For S/d Contactsmentioning

confidence: 97%

Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact

Kawanago

Kajikawa

Mizutani

et al. 2023

IEEE J. Electron Devices Soc.

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“…The Al 1−x Sc x N films could be produced by reactive magnetic sputtering [7][8][9], a method highly attractive for mass production. The Al-Sc alloy target plays a crucial role in the sputtering process, and the specific Al-Sc alloy target is sputtered and combined with nitrogen to form the Al 1−x Sc x N film.…”

Section: Introductionmentioning

confidence: 99%

Cast Microstructure and Crystallographic Features of Al3Sc Dendrites in High Sc-Contained Al-Sc Alloys

He,

Jia,

Ding

et al. 2024

Crystals

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Al-Sc alloys containing high Sc content are employed as sputtering targets for the fabrication of high-performance piezoelectric films during magnetic sputtering. Due to the high proportion of the Al3Sc phase, their workability is quite limited, and they are often used in the as-cast state. In this study, the crystallography of Al3Sc dendrites in as-casted Al-10at.%Sc and Al-20at.%Sc samples is examined using electron backscatter diffraction (EBSD). With increasing Sc content, the fraction of Al3Sc also increases. The Al3Sc dendrites exhibit a cubic relationship with the Al matrix in both alloys. However, in Al-10%Sc alloys, the facets of the Al3Sc dendrites are parallel to {001} planes, while twinning is observed in Al-20at.%. The twinning plane is parallel to the {111} plane, and the dendrite growth direction aligns with the <110> directions. The different morphologies of the dendrite structures in these two alloys are discussed in relation to thermodynamic and kinetic considerations based on the phase diagram and nucleation rate.

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