Preparation and microstructural characterization of oriented titanosilicate ETS-10 thin films on indium tin oxide surfaces

Galioglu, Sezin; Ismail, Mariam N.; Warzywoda, Juliusz; Sacco, Albert; Akata, Burcu

doi:10.1016/j.micromeso.2010.02.001

Cited by 9 publications

(10 citation statements)

References 44 publications

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“…For instance, CPO values for ETS-10 membranes prepared on a-alumina substrates and ITO coated glass substrates were calculated [3,5]. Yilmaz et al compared the peak intensities of (110) and (001) planes instead of calculating CPO.…”

Section: Resultsmentioning

confidence: 99%

“…The diffraction peaks were scanned between 5°a nd 40°with a scan speed of 1°/min for phase identification. The degree of out-of-plane preferred orientation of AM-6 films was quantified by comparing the integrated intensities of (105) and (200) where, I depicts the integrated intensity of the corresponding reflections, the subscripts p and f represent powder sample (randomly oriented) and films (preferentially oriented), respectively [3,5]. The integrated intensity of XRD peaks was determined using the Rigaku-Ultima IV XRD software.…”

Section: Characterizationmentioning

confidence: 99%

“…The thin film form of ETS-10, supported on conductive ITO coated glass, glass, a-alumina and stainless steel substrates was tested for several different applications such as separation, solar cells, fuel cells and photochromism [3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

“…Among them, vanadosilicate AM-6, isostructural with ETS-10, is a 3-D, 12-membered microporous zeo-type material, consisting of SiO 4 tetrahedra and VO 6 octahedra [9]. Unlike ETS-10, AM-6 has 1-D VO 3 2-quantum wires instead of TiO 3 2-with narrower band gap compared to titanosilicate ETS-10 (i.e., *3.8 vs. *4.3 eV, for AM-6 and ETS-10, respectively) [10][11][12]. These quantum wires have the potential to be used as building blocks in nanoscale electronic devices [13].…”

Section: Introductionmentioning

confidence: 99%

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Secondary growth of microporous vanadosilicate AM-6 films

2016

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Oriented vanadosilicate AM-6 thin films with an average thickness of 1-2 lm were prepared on the ITO coated glass substrates using secondary growth method with a partial a(b)-out-of-plane preferred crystal orientation for the first time. In secondary growth method, titanosilicate ETS-10 crystals were deposited on the substrate from a colloidal suspension to form seed layers. Then, the hydrothermal growth of the seed crystals was conducted to form AM-6 films. It was observed that the AM-6 films formed possess similar 1-D VO 3 2-quantum wires as also observed in powder AM-6 crystals. Afterward, the effect of reaction temperature and amount of water in the secondary growth gel on crystal morphology and a(b)-out-of-plane crystallographic preferred orientation (CPO) were investigated to gain a better understanding of the secondary growth mechanism of vanadosilicate AM-6 films. The results suggested that the increased amount of water leads to increased CPO in the AM-6 films, whereas an increase in reaction temperature from 503 to 528 K leads to more c-oriented AM-6 films with a decreased CPO value. Furthermore, an increase in the reaction temperature led to a decrease in the reaction time, resulting in the formation of quartz impurity. Accordingly, well intergrown a(b)-out-of-plane oriented vanadosilicate films were grown for the first time using ETS-10 seed crystals and it is believed that this work provides an effective pathway for controlling the synthesis of AM-6 films expanding the possible range of applications of these materials possessing 1-D quantum wires.

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Section: Resultsmentioning

confidence: 99%

Section: Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Secondary growth of microporous vanadosilicate AM-6 films

2016

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“…Through hydrothermal pretreatment of the precursor solution, c-oriented growth of the seed layer became predominant in secondary growth [22]. An a-oriented ETS-10 film with columnar grain boundary microstructures was recently grown on an ITO glass substrate by secondary growth of a preferentially a-oriented ETS-10 seed multilayer [23]. We recently synthesized highly a-and b-oriented zeolite T membranes by microwave-assisted secondary growth of preferentially oriented seed layers.…”

Section: Introductionmentioning

confidence: 99%

Effective manipulation of the microstructure of zeolite film by hydrothermal pretreatment

Liu

Yang

2011

J Mater Sci

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Zeolite films with diverse microstructures were prepared from highly regular seed monolayers by accurate manipulation of various synthetic parameters during secondary growth. The effects of the hydrothermal pretreatment procedure, hydrothermal pretreatment temperature and duration, secondary growth temperature and duration of prepared zeolite films on final microstructures were investigated in detail. Based on these results, a mechanism was proposed to elucidate the effects of hydrothermal pretreatment on the secondary growth dynamics of the zeolite films: hydrothermal pretreatment could induce the separation of secondary nucleation and the subsequent growth process. Consequently, the disordered growth of zeolite films could be effectively avoided.

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