Preparation and luminescent characteristic of Li3NbO4 nanophosphor

Hsiao, Yu‐Jen; Fang, Te-Hua; Lin, Shiang-Jiun; Shieh, Jia‐Min; Ji, Liang‐Wen

doi:10.1016/j.jlumin.2010.04.023

Cited by 22 publications

(14 citation statements)

References 18 publications

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“…Li 3 NbO 4 is a compound with technological importance for, e.g., low-cost microwave dielectrics 26 possessing useful luminescent characteristics. 27 Li 3 NbO 4 crystallizes in the rocksalt structure, 28 which is not present for LiNbO 3 . Here, values of ρ film = 3.81 × 10 −6Å−2 , ρ interface = 4.86 × 10 −6Å−2 , and ρ crystal = 3.30 × 10 −6Å−2 are present (see also Fig.…”

Section: B Additional Simulationsmentioning

confidence: 98%

Diffusivity determination in bulk materials on nanometric length scales using neutron reflectometry

et al. 2012

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An approach based on neutron reflectometry and isotope heterostructures is presented in order to determine self-diffusivities in bulk materials on small length scales of 1-10 nm. The method is demonstrated for lithium self-diffusion in LiNbO 3 single crystals at low temperatures of 200 and 250 • C using 6 LiNbO 3 (amorphous film)/ nat LiNbO 3 (single crystal) structures for analysis. Lithium diffusivities are derived from neutron reflectivity patterns in good agreement with results obtained by secondary ion mass spectrometry on the same type of samples but on larger length scales up to 90 nm, as given in literature. In addition, neutron reflectivity simulations were performed in order to investigate the influence of diffusion length and scattering length density on the quality of the results. The limitation of the method is discussed.

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Section: B Additional Simulationsmentioning

confidence: 98%

Diffusivity determination in bulk materials on nanometric length scales using neutron reflectometry

et al. 2012

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“…NbO2 is currently used in memory, neuristor circuitry, and relaxation oscillator circuitry [14][15][16]. The Li-Nb-O material family also includes other ceramics of various dielectric constants used in a variety of applications including battery electrodes, microwave frequency dielectrics, phosphors, photocatalysts for water reduction, and hysteretic MIM tunnel diodes or "memdiodes" (Li3NbO4, LiNb3O8, and Nb2O5) [17][18][19][20][21][22]5,23,24].This fundamental understanding will allow new devices and heterostructures to be explored including but not limited to neuromorphic computing elements, strain enhanced sensors and MEMS, high K dielectrics, tunable dielectrics, ferroelectric superlattices, and ferroelectric switching transistors with switchable enhanced channel conductance.With this motivation in mind the materials in the Li-Nb-O family are analyzed by crystal quality and surface morphology for use in future heterostructure devices. In this architecture it is shown that LiNbO2, LiNbO3, and NbO2 are the multi-functional active materials while niobium can be used as a contact layer, subcollector, or waveguide cladding layer, and LiNbO3 or Li3NbO4 may be chosen as a dielectric.…”

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confidence: 99%

Molecular Beam Epitaxy of lithium niobium oxide multifunctional materials

Tellekamp

Shank

Doolittle

2017

Journal of Crystal Growth

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The role of stoichiometry and growth temperature in the preferential nucleation of material phases in the Li-Nb-O family are explored yielding an empirical growth phase diagram. It is shown that while single parameter variation often produces multi-phase films, combining substrate temperature control with the previously published lithium flux limited growth allows the repeatable growth of high quality single crystalline films of many different oxide phases. Higher temperatures (800-1050°C) than normally used in MBE were necessary to achieve high quality materials. At these temperatures the desorption of surface species is shown to play an important role in film composition. Using this method single phase films of NbO, NbO2, LiNbO2, Li3NbO4, LiNbO3, and LiNb3O8 have been achieved in the same growth system, all on c-plane sapphire. Finally, the future of these films in functional oxide heterostructures is briefly discussed.The lithium niobium oxide family consists of conducting, semiconducting, and insulating materials across a wide resistivity and bandgap range. Figure 1 lists the resistivity of a few materials in the system as a function of niobium valence, ranging from conducting niobium to insulating lithium niobite (LiNbO3). These materials span 22 orders of magnitude in resistivity with bandgaps from IR to UV [1][2][3][4][5][6][7][8]. Oxides in general have many desirable multifunctional properties, for example; piezoelectric, pyroelectric, and ferroelectric effects which can exist in a single material such as lithium niobate [9,10]. Lithium niobite (LiNbO2), a suboxide of the same family, is currently the focus of multiple research areas. LiNbO2 is used as a memristor for neuromorphic applications, a battery cathode material showing potential for high rate capability and long term cycle stability, and is also studied for unique optical properties [11][12][13]. NbO2 acts as a digital memristor, a device with discrete on and off resistance states. NbO2 is currently used in memory, neuristor circuitry, and relaxation oscillator circuitry [14][15][16]. The Li-Nb-O material family also includes other ceramics of various dielectric constants used in a variety of applications including battery electrodes, microwave frequency dielectrics, phosphors, photocatalysts for water reduction, and hysteretic MIM tunnel diodes or "memdiodes" (Li3NbO4, LiNb3O8, and Nb2O5) [17][18][19][20][21][22]5,23,24].This fundamental understanding will allow new devices and heterostructures to be explored including but not limited to neuromorphic computing elements, strain enhanced sensors and MEMS, high K dielectrics, tunable dielectrics, ferroelectric superlattices, and ferroelectric switching transistors with switchable enhanced channel conductance.With this motivation in mind the materials in the Li-Nb-O family are analyzed by crystal quality and surface morphology for use in future heterostructure devices. In this architecture it is shown that LiNbO2, LiNbO3, and NbO2 are the multi-functional active materials while niobium can be used...

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“…(12) Polygonal Li 3 NbO 4 particles were formed by assembling grains with one cubic crystalline phase in the ceramic matrix. (13) Figures 3(a) Figure 5 shows the absorption spectra of ZnO-Li 3 NbO 4 doped with 5 mol% Eu 3+ and annealed at 900 ℃ for 2 h. The high absorption spectral peak of ZnO-Li 3 NbO 4 :Eu 3+ was located between 300 and 400 nm. The absorption spectral peaks at 466 and 538 nm corresponded to 7 F 0 → 5 D 2 and 7 F 0 → 5 D 1, respectively.…”

Section: Methodsmentioning

confidence: 99%

Photoluminescence and Structural Characteristics of Eu-doped ZnO–Li3NbO4

Huang¹,

Fang²,

Lin³

et al. 2020

Sensors and Materials

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In this study, Eu 3+-doped ZnO-Li 3 NbO 4 phosphors were prepared by the sol-gel method. The physical and luminescence properties of the Eu 3+-doped ZnO-Li 3 NbO 4 structure were characterized. The results show the crystallinity of the biphasic ZnO-Li 3 NbO 4 structure sintered at temperatures above 400 ℃. The main excitation and emission bands of the Eu 3+doped ZnO-Li 3 NbO 4 phosphors were 466 nm (7 F 0 → 5 D 2) and 615 nm (5 D 0 → 7 F 2), respectively. When the amount of Eu 3+ was 5%, the highest emission intensity was obtained at 595 nm (5 D 0 → 7 F 1) and 615 nm (5 D 0 → 7 F 2).

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Preparation and luminescent characteristic of Li3NbO4 nanophosphor

Cited by 22 publications

References 18 publications

Diffusivity determination in bulk materials on nanometric length scales using neutron reflectometry

Diffusivity determination in bulk materials on nanometric length scales using neutron reflectometry

Molecular Beam Epitaxy of lithium niobium oxide multifunctional materials

Photoluminescence and Structural Characteristics of Eu-doped ZnO–Li3NbO4

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