2013
DOI: 10.1134/s0020168513060101
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Preparation and dielectric properties of celsian ceramics based on hexagonal BaAl2Si2O8

Abstract: Celsian ceramics based on hexagonal BaAl 2 Si 2 O 8 have been prepared through synthesis at 1450°C followed by firing at 1500°C. The unit cell parameters of BaAl 2 Si 2 O 8 and principal bond distances in its structure have been determined by the Rietveld method. Using differential thermal analysis and tempera ture dependent dielectric measurements, we have determined the temperature of the α (hexagonal) to β (hexagonal) phase transition in our samples: 280-320°C.

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Cited by 8 publications
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“…This is due to space charge polarization, which was unable to respond quickly to the changing electric field within this fre quency range. As a result, orientation polarization played a significant role in the polarization of the ceramic samples [19].…”
Section: Fig 1 Xrd Patterns Of Sbws Wastementioning
confidence: 99%
“…This is due to space charge polarization, which was unable to respond quickly to the changing electric field within this fre quency range. As a result, orientation polarization played a significant role in the polarization of the ceramic samples [19].…”
Section: Fig 1 Xrd Patterns Of Sbws Wastementioning
confidence: 99%